Datasheet FMMT717 (Diodes) - 2
Fabricante | Diodes |
Descripción | 12V PNP Silicon Low Saturation Transistor In SOT23 |
Páginas / Página | 7 / 2 — A Product Line of. Diodes Incorporated. FMMT717. Maximum Ratings. … |
Formato / tamaño de archivo | PDF / 421 Kb |
Idioma del documento | Inglés |
A Product Line of. Diodes Incorporated. FMMT717. Maximum Ratings. Characteristic Symbol. Value. Unit. Thermal Characteristics
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A Product Line of Diodes Incorporated FMMT717 Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -2.5 A Peak Pulse Current ICM -10 A Base Current IB -500 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 625 mW Power Dissipation (Note 7) PD 806 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 7) RθJA 155 °C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 194 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note 6, except the device is measured at t ≤ 5 sec. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT717 2 of 7 October 2012 Document Number: DS33116 Rev. 5 - 2
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