Datasheet 1N4702 (Vishay)
| Fabricante | Vishay |
| Descripción | Silicon Epitaxial Planar Z–Diodes |
| Páginas / Página | 6 / 1 — 1N4678...1N4717. Vishay Telefunken. Silicon Epitaxial Planar Z–Diodes. … |
| Formato / tamaño de archivo | PDF / 69 Kb |
| Idioma del documento | Inglés |
1N4678...1N4717. Vishay Telefunken. Silicon Epitaxial Planar Z–Diodes. Features. Applications. Absolute Maximum Ratings
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1N4678...1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features
D Zener voltage specified at 50 mA D Maximum delta VZ given from 10 mA to 100 mA D Very high stability D Low noise
Applications
94 9367 Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation l=4mm, TL=25°C PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 300 K/W
Electrical Characteristics
Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=100mA VF 1.5 V Document Number 85586 www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 01-Apr-99 1 (6)
D Zener voltage specified at 50 mA D Maximum delta VZ given from 10 mA to 100 mA D Very high stability D Low noise
Applications
94 9367 Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation l=4mm, TL=25°C PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 300 K/W
Electrical Characteristics
Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=100mA VF 1.5 V Document Number 85586 www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 01-Apr-99 1 (6)