Datasheet 2N5401 (ON Semiconductor) - 3

Values are at TA = 25C unless otherwise noted. Symbol
PD
RJA Parameter Max. Total Device Dissipation 625 mW 5 mW/C 200 C/W Derate above 25C
Thermal Resistance, Junction to Ambient Unit Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
BVCBO Parameter Conditions Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO (2) Min. Typ. Max. Unit IC = -100 A, IE = 0 -160 V IC = -1 mA, IB = 0 -150 V -5 Emitter-Base Breakdown Voltage IE = -10 A, IC = 0 ICBO Collector Cut-Off Current VCB = -120 V, IE = 0 -50 A IEBO Emitter Cut-Off Current VEB = -3 V, IC = 0 -50 A IC = -1 mA, VCE = -5 V
hFE1 DC Current Gain(2) IC = -10 mA,
VCE = -5 V Collector-Emitter Saturation Voltage(2) VBE(sat) Base-Emitter Saturation Voltage(2) fT
Cob
NF Current Gain Bandwidth Product 30 Standard Class 60 240 Y Class 120 240 IC = -50 mA, VCE = -5 V
VCE(sat) V 50 IC = -10 mA, IB = -1 mA -0.2 V IC = -50 mA, IB = -5 mA -0.5 V IC = -10 mA, IB = -1 mA -1.0 V IC = -50 mA, IB = -5 mA -1.0 V 400 MHz IC = -10 mA,
VCE = -10 V, f = 100 MHz 100 Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6 pF Noise Figure IC = -250 A, VCE = -5 V,RS = 1 k,
f = 10 Hz to 15.7 kHz 8 dB Note:
2. Pulse Test: Pulse Width300s, Duty Cycle2%. © 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1 www.fairchildsemi.com
2 2N5401 — Amplifier Transistor Thermal Characteristics(1)