Datasheet BYV10-600P (NXP) - 4

link to page 4 link to page 5 link to page 5 link to page 5 link to page 5
NXP Semiconductors BYV10-600P Ultrafast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance Fig. 5 - - 3.5 K/W from junction to mounting base Rth(j-a) thermal resistance in free air - 60 - K/W from junction to ambient aaa-008983 10 Zth(j-mb) (K/W) 1 10-1 δ = 0.5 δ = 0.3 10-2 δ = 0.1 t P p δ = 0.05 δ = T δ = 0.02 10-3 δ = 0.01 single pulse t tp T 10-410-6 10-1 10-2 10-5 10-3 10-4 1 10 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
VF forward voltage IF = 10 A; Tj = 25 °C; Fig. 6 - 1.5 2 V IF = 10 A; Tj = 150 °C; Fig. 6 - - 1.6 V IR reverse current VR = 600 V; Tj = 25 °C - - 10 µA VR = 500 V; Tj = 150 °C - - 250 µA
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; - 35 50 ns Tj = 25 °C; Fig. 7 IF = 10 A; VR = 200 V; dIF/dt = 200 A/ - 40 - ns µs; Tj = 25 °C; Fig. 7 BYV10-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 4 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Legal information