Datasheet Si3457CDV (Vishay) - 6

Si3457CDV
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 ransient T 0.1 Notes: Impedance fective 0.1 0.05 Ef PDM Thermal t1 t2 t1 0.02 1. Duty Cycle, D = Normalized t2 2. Per Unit Base = RthJA = 90 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 0.2 ransient T 0.1 Impedance fective 0.1 Ef 0.05 Thermal 0.02 Normalized Single Pulse 0.01 10-3 10-2 10-1 10-4 1 0 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68602. SO9-0131-Rev. B, 02-Feb-09
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