Datasheet IRF640, SiHF640 (Vishay) - 5

IRF640, SiHF640
www.vishay.com Vishay Siliconix L VDS Vary tp to obtain QG required IAS 10 V R D.U.T G + Q Q V GS GD - DD IAS V 10 V G t 0.01 p Ω Charge
Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform
V Current regulator DS Same type as D.U.T. tp VDD 50 kΩ 12 V 0.2 µF 0.3 µF VDS + V D.U.T. DS - IAS VGS 3 mA
Fig. 12b - Unclamped Inductive Waveforms
I I G D Current sampling resistors 1400
Fig. 13b - Gate Charge Test Circuit
ID 1200 Top 6.0 A 11.0 A Bottom 18.0 A 1000 800 600 400 , Single Pulse Energy (mJ) AS 200 E V = 50 V DD 0 25 50 75 100 125 150 91036_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S15-2667-Rev. C, 16-Nov-15
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