Datasheet IRF640, SiHF640 (Vishay) - 3

IRF640, SiHF640
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) V 3.0 GS I = 18 A D Top 15 V V = 10 V 10 V GS 2.5 8.0 V 7.0 V 6.0 V 5.5 V 2.0 101 5.0 V ed) Bottom 4.5 V 1.5 maliz ain Current (A) (Nor , Dr 1.0 I D ain-to-Source On Resistance 100 4.5 V , Dr 0.5 20 µs Pulse Width T = 25 °C C DS(on) 0.0 R 10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91036_01 VDS, Drain-to-Source Voltage (V) 91036_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 3000 GS VGS = 0 V, f = 1 MHz Top 15 V C = C + C , C Shorted iss gs gd ds 10 V 2500 C = C rss gd 8.0 V C = C + C oss ds gd 7.0 V 101 6.0 V 2000 5.5 V Ciss 5.0 V 1500 Bottom 4.5 V 4.5 V ain Current (A) C , Dr 1000 oss Capacitance (pF) I D 100 500 Crss 20 µs Pulse Width T = 150 °C C 0 10-1 100 101 100 101 91036_02 VDS, Drain-to-Source Voltage (V) 91036_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 I = 18 A D V = 160 V DS 150 °C 16 101 ltage (V) V = 100 V DS o V V = 40 V 12 DS 25 °C ain Current (A) 100 8 , Dr I D , Gate-to-Source 4 20 µs Pulse Width GSV For test circuit 10-1 V = 50 V DS see figure 13 0 4 5 6 7 8 9 10 0 15 30 45 60 75 91036_03 VGS, Gate-to-Source Voltage (V) 91036_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-2667-Rev. C, 16-Nov-15
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