Datasheet VS-50SQ060, VS-50SQ080, VS-50SQ100 (Vishay) - 2
| Fabricante | Vishay |
| Descripción | Schottky Rectifier, 5 A |
| Páginas / Página | 7 / 2 — VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3). ELECTRICAL … |
| Formato / tamaño de archivo | PDF / 122 Kb |
| Idioma del documento | Inglés |
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3). ELECTRICAL SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. VALUES. UNITS
Línea de modelo para esta hoja de datos
Versión de texto del documento
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
5 A 0.66 TJ = 25 °C Maximum forward voltage drop 10 A 0.77 V (1) V See fig. 1 FM 5 A 0.52 TJ = 125 °C 10 A 0.62 Maximum reverse leakage current TJ = 25 °C 0.55 I V mA See fig. 2 RM (1) R = Rated VR TJ = 125 °C 7 Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 500 pF Typical series inductance LS Measured lead to lead 5 mm from body 10 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage T temperature range J, TStg - 55 to 175 °C Maximum thermal resistance, DC operation; see fig. 4 R 8.0 junction to lead thJL 1/8" lead length °C/W Typical thermal resistance, R junction to air thJA 44 1.4 g Approximate weight 0.049 oz. 50SQ060 Marking device Case style DO-204AR (JEDEC) 50SQ080 50SQ100 Revision: 19-Sep-11
2
Document Number: 93355 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
5 A 0.66 TJ = 25 °C Maximum forward voltage drop 10 A 0.77 V (1) V See fig. 1 FM 5 A 0.52 TJ = 125 °C 10 A 0.62 Maximum reverse leakage current TJ = 25 °C 0.55 I V mA See fig. 2 RM (1) R = Rated VR TJ = 125 °C 7 Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 500 pF Typical series inductance LS Measured lead to lead 5 mm from body 10 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage T temperature range J, TStg - 55 to 175 °C Maximum thermal resistance, DC operation; see fig. 4 R 8.0 junction to lead thJL 1/8" lead length °C/W Typical thermal resistance, R junction to air thJA 44 1.4 g Approximate weight 0.049 oz. 50SQ060 Marking device Case style DO-204AR (JEDEC) 50SQ080 50SQ100 Revision: 19-Sep-11
2
Document Number: 93355 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000