Datasheet FZT788B (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 15V PNP Medium Power High Gain Transistor In SOT223 |
| Páginas / Página | 7 / 2 — FZT788B. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
FZT788B. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. ESD Ratings. JEDEC Class. www.diodes.com
Línea de modelo para esta hoja de datos
Versión de texto del documento
FZT788B Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -8 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 3 (Note 6) 2 Power Dissipation PD W (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient RJA (Note 7) 78.1 °C/W (Note 8) 104 Thermal Resistance Junction to Lead (Note 9) RJL 12.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 5, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT788B 2 of 7 March 2022 Document number: DS33167 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -8 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 3 (Note 6) 2 Power Dissipation PD W (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient RJA (Note 7) 78.1 °C/W (Note 8) 104 Thermal Resistance Junction to Lead (Note 9) RJL 12.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 5, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT788B 2 of 7 March 2022 Document number: DS33167 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated