Datasheet IRF1010N (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 222 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRF1010N 20 6000 V ID = 43A GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED 5000 Crss = Cgd Coss = Cds + Cgd V = 44V DS 16 V = 27V DS V = 11V DS 4000 Ciss 12 3000 Coss 8 2000 C, Capacitance(pF) 4 1000 Crss GSV , Gate-to-Source Voltage (V) 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 20 40 60 80 100 120 Q , Total Gate Charge (nC) V G DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 T = 175 C ° J 100 100µsec 10 10 1msec 1 T = 25 C ° J , Drain-to-Source Current (A) I , Reverse Drain Current (A) SD I D Tc = 25°C Tj = 175°C 10msec V = 0 V GS Single Pulse 0.1 1 0.0 0.6 1.2 1.8 2.4 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 T = 175 C ° J 100 100µsec 10 10 1msec 1 T = 25 C ° J , Drain-to-Source Current (A) I , Reverse Drain Current (A) SD I D Tc = 25°C Tj = 175°C 10msec V = 0 V GS Single Pulse 0.1 1 0.0 0.6 1.2 1.8 2.4 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com