Datasheet HUF75652G3 (ON Semiconductor) - 8

HUF75652G3 PSPICE Electrical Model
.SUBCKT HUF75652 2 1 3 ; rev 11 May 1999 CA 12 8 11.0e−9 CB 15 14 11.4e−9 CIN 6 8 6.95e−9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD
LDRAIN DPLCAP
DPLCAP 10 5 DPLCAPMOD
5 DRAIN 2 10 RLDRAIN
EBREAK 11 7 17 18 117.5
RSLC1
EDS 14 8 5 8 1
+ DBREAK 51
EGS 13 8 6 8 1
RSLC2
ESG 6 10 6 8 1
ESLC 11
EVTHRES 6 21 19 8 1
−
EVTEMP 20 6 18 22 1
− 50 + 6 17 RDRAIN DBODY ESG EBREAK 18
IT 8 17 1
8 − + EVTHRES 16 + − 21
LDRAIN 2 5 1.0e−9
19 MWEAK LGATE EVTEMP 8
LGATE 1 9 5.74e−9
GATE RGATE + − 6
LSOURCE 3 7 4.65e−9
18 1 22 MMED 9 20
MMED 16 6 8 8 MMEDMOD
MSTRO RLGATE
MSTRO 16 6 8 8 MSTROMOD
LSOURCE CIN
MWEAK 16 21 8 8 MWEAKMOD
SOURCE 8 7 3
RBREAK 17 18 RBREAKMOD 1
RSOURCE
RDRAIN 50 16 RDRAINMOD 2.80e−3
RLSOURCE
RGATE 9 20 0.85
S1A S2A
RLDRAIN 2 5 10
RBREAK 12 13 14 15
RLGATE 1 9 57.4
17 18 8 13
RLSOURCE 3 7 46.5 RSLC1 5 51 RSLCMOD 1e−6
S1B S2B RVTEMP
RSLC2 5 50 1e3
13 19 CA CB
RSOURCE 8 7 RSOURCEMOD 2.50e−3
+ 14 IT − + +
RVTHRES 22 8 RVTHRESMOD 1
6 5 VBAT
RVTEMP 18 19 RVTEMPMOD 1
EGS 8 EDS 8 + − −
S1A 6 12 13 8 S1AMOD
8 22
S1B 13 12 13 8 S1BMOD
RVTHRES
S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51) /ABS(V(5,51)))*(PWR(V(5,51)/(1e−6*455),2))} .MODEL DBODYMOD D (IS = 6.55e−12 IKF = 30 RS = 1.69e−3 TRS1 = 1.95e−3 TRS2 = 1.05e−6 CJO = 8.71e−9 TT = 7.81e−8 M = 0.50) .MODEL DBREAKMOD D (RS = 1.45e− 1TRS1 = 1.02e− 4TRS2 = 1.11e−7) .MODEL DPLCAPMOD D (CJO = 1.00e− 8IS = 1e−3 0N = 1 M = 0.85) .MODEL MMEDMOD NMOS (VTO = 2.91 KP = 6.50 IS = 1e−30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.85) .MODEL MSTROMOD NMOS (VTO = 3.37 KP = 205 IS = 1e−30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.56 KP = 0.10 IS = 1e−30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.5 ) .MODEL RBREAKMOD RES (TC1 = 1.09e− 3TC2 = 1.04e−7) .MODEL RDRAINMOD RES (TC1 = 1.38e−2 TC2 = 3.75e−5) .MODEL RSLCMOD RES (TC1 = 1.05e−4 TC2 = 2.13e−7) .MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = −2.92e−3 TC2 = −1.48e−5) .MODEL RVTEMPMOD RES (TC1 = −3.0e− 3TC2 = 1.21e−6) .MODEL S1AMOD VSWITCH (RON = 1e−5 ROFF = 0.1 VON = −5.0 VOFF= −3.0) .MODEL S1BMOD VSWITCH (RON = 1e−5 ROFF = 0.1 VON = −3.0 VOFF= −5.0) .MODEL S2AMOD VSWITCH (RON = 1e−5 ROFF = 0.1 VON = −2.0 VOFF= 0.0) .MODEL S2BMOD VSWITCH (RON = 1e−5 ROFF = 0.1 VON = 0.0 VOFF= −2.0) .ENDS NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub−Circuit for the Power MOSFET Featuring Global Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank W heatley.
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