Datasheet IXTA44P15T, IXTP44P15T, IXTQ44P15T, IXTH44P15T (IXYS) - 2

IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Symbol Test Conditions Characteristic Values
(T = 25°C, Unless Otherwise Specified)
Min. Typ. Max.
J
g
V = -10V, I = 0.5 • I , Note 1 27 45 S
fs
DS D D25
C
13.4 nF
iss C
V = 0V, V = - 25V, f = 1MHz 675 pF
oss
GS DS
C
183 pF
rss t
25 ns
d(on) Resistive Switching Times t
42 ns
r
V = -10V, V = 0.5 • V , I = 0.5 • I
t
GS DS DSS D D25 50 ns
d(off) t
R = 1Ω (External) G 17 ns
f Q
175 nC
g(on) Q
V = -10V, V = 0.5 • V , I = 0.5 • I 65 nC
gs
GS DS DSS D D25
Q
58 nC
gd R
0.42 °C/W
thJC R
TO-220 0.50 °C/W
thCS
TO-247 & TO-3P 0.21 °C/W
Source-Drain Diode Symbol Test Conditions Characteristic Values
(T = 25°C, Unless Otherwise Specified)
Min. Typ. Max.
J
I
V = 0V - 44 A
S
GS
I
Repetitive, Pulse Width Limited by T -176 A
SM
JM
V
I = I , V = 0V, Note 1 -1.3 V
SD
F S GS
t
140 ns
rr
I = - 22A, -di/dt = -100A/μs
Q
F 0.87 μC
RM
V = - 75V, V = 0V
I
R GS -12.4 A
RM
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537