Datasheet TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | Plastic Medium-Power Complementary Silicon Transistors |
| Páginas / Página | 8 / 6 — TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). NPN. PNP. … |
| Formato / tamaño de archivo | PDF / 157 Kb |
| Idioma del documento | Inglés |
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). NPN. PNP. TIP110, 111, 112. TIP115, 116, 117
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) NPN PNP TIP110, 111, 112 TIP115, 116, 117
6.0 k 6.0 k T V V J = 125°C CE = 3.0 V CE = 3.0 V 4.0 k 4.0 k TJ = 125°C 3.0 k 3.0 k 25°C GAIN GAIN 2.0 k 25°C 2.0 k -55°C -55°C 1.0 k 1.0 k , DC CURRENT 800 , DC CURRENT 800 FE FE h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.4 3.4 TS) TS) T T I J = 25°C J = 25°C C = 3.0 3.0 0.5 A 1.0 A I 2.0 A 4.0 A C = TAGE (VOL TAGE (VOL 2.6 2.6 0.5 A 1.0 A 2.0 A 4.0 A 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 1.0 1.0 , COLLECT , COLLECT CE CE V 0.6 V 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
2.2 2.2 T T J = 25°C J = 25°C 1.8 1.8 TS) TS) VBE(sat) @ IC/IB = 250 1.4 VBE(sat) @ IC/IB = 250 V 1.4 V BE @ VCE = 3.0 V BE @ VCE = 3.0 V TAGE (VOL TAGE (VOL 1.0 1.0 , VOL V , VOL CE(sat) @ IC/IB = 250 V V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 6
6.0 k 6.0 k T V V J = 125°C CE = 3.0 V CE = 3.0 V 4.0 k 4.0 k TJ = 125°C 3.0 k 3.0 k 25°C GAIN GAIN 2.0 k 25°C 2.0 k -55°C -55°C 1.0 k 1.0 k , DC CURRENT 800 , DC CURRENT 800 FE FE h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.4 3.4 TS) TS) T T I J = 25°C J = 25°C C = 3.0 3.0 0.5 A 1.0 A I 2.0 A 4.0 A C = TAGE (VOL TAGE (VOL 2.6 2.6 0.5 A 1.0 A 2.0 A 4.0 A 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 1.0 1.0 , COLLECT , COLLECT CE CE V 0.6 V 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
2.2 2.2 T T J = 25°C J = 25°C 1.8 1.8 TS) TS) VBE(sat) @ IC/IB = 250 1.4 VBE(sat) @ IC/IB = 250 V 1.4 V BE @ VCE = 3.0 V BE @ VCE = 3.0 V TAGE (VOL TAGE (VOL 1.0 1.0 , VOL V , VOL CE(sat) @ IC/IB = 250 V V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 6