Datasheet NDS9948 (Fairchild) - 2

NDS9948 Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)
WDSS Drain-Source Avalanche Energy Single Pulse, VDD=–54 V 15 mJ IAR Drain-Source Avalanche Current –10 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to25°C –52 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = –40 V, VGS = 0 V –2 µA VDS = –40 V,VGS = 0 V TJ =–55°C –25 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V ∆VGS(th) Gate Threshold Voltage I D = –250 µA, Referenced to25°C 4 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = –10 V, ID = –2.3 A 138 250 mΩ On–Resistance VGS = –4.5 V, ID = –1.6 A 175 500 V 225 433 GS = –10 V,ID = –2.3A, TJ =125°C ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S
Dynamic Characteristics
Ciss Input Capacitance 394 pF VDS = –30 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 53 pF Crss Reverse Transfer Capacitance 23 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time V 6 12 ns DD = –30 V, ID = –1 A, t V r Turn–On Rise Time GS = –10 V, RGEN = 6 Ω 9 18 ns td(off) Turn–Off Delay Time 16 29 ns tf Turn–Off Fall Time 3 6 ns Qg Total Gate Charge V 9 13 nC DS = –30 V, ID = –2.3 A, Q VGS = –10 V gs Gate–Source Charge 1.4 nC Qgd Gate–Drain Charge 1.7 nC NDS9948 Rev
B1
(W)