Datasheet 2N5031 (Microsemi) - 2
| Fabricante | Microsemi |
| Descripción | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Páginas / Página | 4 / 2 — 2N5031. Symbol. Test Conditions. Value. Min. Typ. Max. Unit. MSC1303.PDF … |
| Formato / tamaño de archivo | PDF / 92 Kb |
| Idioma del documento | Inglés |
2N5031. Symbol. Test Conditions. Value. Min. Typ. Max. Unit. MSC1303.PDF 10-25-99
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2N5031
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off)
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 10 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) 15 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) 3.0 - - Vdc ICBO Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) - 1.0 10 nA (on) HFE DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) 25 - 300
-
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
fT Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 1200 - 2500 MHz CCB Output Capacitance (IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
-
2.5 - dB
MSC1303.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off)
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 10 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) 15 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) 3.0 - - Vdc ICBO Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) - 1.0 10 nA (on) HFE DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) 25 - 300
-
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
fT Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 1200 - 2500 MHz CCB Output Capacitance (IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
-
2.5 - dB
MSC1303.PDF 10-25-99