Datasheet IRLR8743PbF, IRLU8743PbF (Infineon) - 5
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 12 / 5 — Fig 9. Fig 10. Fig 11 |
| Revisión | 01_01 |
| Formato / tamaño de archivo | PDF / 387 Kb |
| Idioma del documento | Inglés |
Fig 9. Fig 10. Fig 11
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IRLR/U8743PbF 180 2.5 160 Limited By Package ) V( e 140 ga ) t 2.0 l A( o 120 t V n d e l r o r 100 h u s I C D = 100µA er 1.5 ni 80 h a T r e D ta , 60 G I D , )h 1.0 40 t(SG 20 V 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200 TC , Case Temperature (°C) TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature Case Temperature 10 W/ C° ) 1 CJ D = 0.50 ht Z ( 0.20 es 0.1 0.10 Ri (°C/W) τi (sec) n R R R R o R 1 R 2 R 3 R 4 p 0.05 1 2 3 4 0.02879 0.000017 s τJ τC e τ 0.02 J τ 0.25773 0.000143 R τ 1 τ τ τ l τ 2 3 4 1 τ τ τ a 0.01 2 3 4 0.48255 0.001411 m 0.01 r Ci= τi/Ri 0.34135 0.010617 e Ci i/Ri h Notes: T SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature Case Temperature 10 W/ C° ) 1 CJ D = 0.50 ht Z ( 0.20 es 0.1 0.10 Ri (°C/W) τi (sec) n R R R R o R 1 R 2 R 3 R 4 p 0.05 1 2 3 4 0.02879 0.000017 s τJ τC e τ 0.02 J τ 0.25773 0.000143 R τ 1 τ τ τ l τ 2 3 4 1 τ τ τ a 0.01 2 3 4 0.48255 0.001411 m 0.01 r Ci= τi/Ri 0.34135 0.010617 e Ci i/Ri h Notes: T SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5