Datasheet RFD10P03L, RFD10P03LSM, RFP10P03L (Intersil) - 2
| Fabricante | Intersil |
| Descripción | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
| Páginas / Página | 8 / 2 — RFD10P03L, RFD10P03LSM, RFP10P03L. Absolute Maximum Ratings. RFD10P03L, … |
| Formato / tamaño de archivo | PDF / 145 Kb |
| Idioma del documento | Inglés |
RFD10P03L, RFD10P03LSM, RFP10P03L. Absolute Maximum Ratings. RFD10P03L, RFD10P03LSM,. RFP10P03L. UNITS. Electrical Specifications
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RFD10P03L, RFD10P03LSM, RFP10P03L Absolute Maximum Ratings
TC = 25oC Unless Otherwise Specifie
RFD10P03L, RFD10P03LSM, RFP10P03L UNITS
Drain to Source Voltage . VDSS -30 V Drain to Gate Voltage (RGS = 20KΩ). VDGR -30 V Gate to Source Voltage . VGS ±10 V Drain Current RMS Continuous . ID 10 A Pulsed Drain Current . .IDM See Figure 5 Single Pulse Avalanche Rating . EAS Refer to UIS Curve Power Dissipation . PD 65 W Derate Above 25oC . 0.43 W/oC Operating and Storage Temperature . TJ, TSTG -55 to 175 oC Maximum Lead Temperature for Soldering . .TL 300 oC (0.063in (1.6mm) from case for 10s) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) -30 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 12) -1 - -2 V Zero Gate Voltage Drain Current IDSS VDS = -30V, TC = 25oC - - -1 µA VGS = 0V TC = 150oC - - -50 µA Gate to Source Leakage Current IGSS VGS = ±10V - - ±100 nA Drain to Source On Resistance rDS(ON) ID = 10A, VGS = -5V (Figures 9, 10) - - 0.200 Ω (Note 1) ID = 10A, VGS = -4.5V (Figures 9, 10) 0.220 Ω Turn-On Time tON VDD = 15V, ID ≅ 10A, RL = 1.5Ω, - - 100 ns RGS = 5Ω, VGS = -5V Turn-On Delay Time td(ON) - 15 - ns (Figure 13) Rise Time tr - 50 - ns Turn-Off Delay Time td(OFF) - 35 - ns Fall Time tf - 20 - ns Turn-Off Time tOFF - - 80 ns Total Gate Charge Qg(TOT) VGS = 0 to -10V VDD = -24V, ID ≅ 10A, - 25 30 nC RL = 2.4Ω Gate Charge at -5V Qg(-5) VGS = 0 to -5V - 13 16 nC Ig(REF) = -0.25mA Threshold Gate Charge Qg(TH) VGS = 0 to -1V (Figure 14) - 1.2 1.5 nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 1035 - pF (Figure 15) Output Capacitance COSS - 340 - pF Reverse Transfer Capacitance CRSS - 35 - pF Thermal Resistance, Junction to Case RθJC - - 2.30 oC/W Thermal Resistance, Junction to Ambient RθJA RFD10P03L, RFD10P03LSM - - 100 oC/W RFP10P03L 80 oC/W
Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Forward Voltage VSD ISD = -10A - - -1.5 V Reverse Recovery Time trr ISD = -10A, dISD/dt = -100A/µs - - 75 ns NOTE: 2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%. 7-4
TC = 25oC Unless Otherwise Specifie
RFD10P03L, RFD10P03LSM, RFP10P03L UNITS
Drain to Source Voltage . VDSS -30 V Drain to Gate Voltage (RGS = 20KΩ). VDGR -30 V Gate to Source Voltage . VGS ±10 V Drain Current RMS Continuous . ID 10 A Pulsed Drain Current . .IDM See Figure 5 Single Pulse Avalanche Rating . EAS Refer to UIS Curve Power Dissipation . PD 65 W Derate Above 25oC . 0.43 W/oC Operating and Storage Temperature . TJ, TSTG -55 to 175 oC Maximum Lead Temperature for Soldering . .TL 300 oC (0.063in (1.6mm) from case for 10s) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) -30 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 12) -1 - -2 V Zero Gate Voltage Drain Current IDSS VDS = -30V, TC = 25oC - - -1 µA VGS = 0V TC = 150oC - - -50 µA Gate to Source Leakage Current IGSS VGS = ±10V - - ±100 nA Drain to Source On Resistance rDS(ON) ID = 10A, VGS = -5V (Figures 9, 10) - - 0.200 Ω (Note 1) ID = 10A, VGS = -4.5V (Figures 9, 10) 0.220 Ω Turn-On Time tON VDD = 15V, ID ≅ 10A, RL = 1.5Ω, - - 100 ns RGS = 5Ω, VGS = -5V Turn-On Delay Time td(ON) - 15 - ns (Figure 13) Rise Time tr - 50 - ns Turn-Off Delay Time td(OFF) - 35 - ns Fall Time tf - 20 - ns Turn-Off Time tOFF - - 80 ns Total Gate Charge Qg(TOT) VGS = 0 to -10V VDD = -24V, ID ≅ 10A, - 25 30 nC RL = 2.4Ω Gate Charge at -5V Qg(-5) VGS = 0 to -5V - 13 16 nC Ig(REF) = -0.25mA Threshold Gate Charge Qg(TH) VGS = 0 to -1V (Figure 14) - 1.2 1.5 nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 1035 - pF (Figure 15) Output Capacitance COSS - 340 - pF Reverse Transfer Capacitance CRSS - 35 - pF Thermal Resistance, Junction to Case RθJC - - 2.30 oC/W Thermal Resistance, Junction to Ambient RθJA RFD10P03L, RFD10P03LSM - - 100 oC/W RFP10P03L 80 oC/W
Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Forward Voltage VSD ISD = -10A - - -1.5 V Reverse Recovery Time trr ISD = -10A, dISD/dt = -100A/µs - - 75 ns NOTE: 2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%. 7-4