Datasheet STTH1L06 (STMicroelectronics) - 3

STTH1L06 Characteristics Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
I t F = 1 A, dIF/dt = -50, A/µs, rr Reverse recovery time Tj = 25 °C 55 80 ns VR = 30 V I t F = 1 A, dIF/dt = 100 A/µs fr Forward recovery time Tj = 25 °C 50 ns VFR = 3.5 V Forward recovery VFP T voltage j = 25 °C IF = 1 A, dIF/dt = 100 A/µs 10 V
Figure 1. Conduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 1.50 100.0
δ δ = 0.1 δ = 0.2 = 0.05 δ = 0.5
1.25
Tj=150°C δ (Maximum v (Maxim alues) um v = 1
1.00 10.0
Tj=150°C (Typical (T values) v
0.75
Tj=25°C (Maximum values)
0.50 1.0
T
0.25 IF(av)(A) VFM(V)
δ=tp/T tp
0.00 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 3. Relative variation of thermal Figure 4. Relative variation of thermal impedance junction ambient versus impedance junction ambient versus pulse duration pulse duration Zth(j-a)/Rth(j-a) Zth(j-a)/Rth(j-a) 1.0 1.0
DO-41
epoxy FR4, Lead = 10 mm
SMB
epoxy FR4, S = 1 cm² 0.9
Lleads = 10mm
0.9 0.8 0.8 0.7 0.7 0.6 0.6
δ = 0.5 δ = 0.5
0.5 0.5 0.4 0.4
δ = 0.2
0.3 0.3
δ = 0.2 T δ = 0.1 T
0.2 0.2
δ = 0.1
0.1 0.1
Single pulse
tp(s)
δ
tp(s)
=tp/T tp Single pulse δ=tp/T tp
0.0 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Doc ID 8321 Rev 4 3/9 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history