Datasheet NTE243, NTE244 (NTE Electronics) - 2
| Fabricante | NTE Electronics |
| Descripción | Silicon Complementary Transistors Darlington Power Amplifier |
| Páginas / Página | 2 / 2 — Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. … |
| Formato / tamaño de archivo | PDF / 27 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit. ON Characteristics
Línea de modelo para esta hoja de datos
Versión de texto del documento
Electrical Characteristics (Cont’d):
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics
(Note 1) DC Current Gain hFE VCE = 3V, IC = 4A 750 – 18000 VCE = 3V, IC = 8A 100 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 16mA – – 2.0 V IC = 8A, IB = 80mA – – 3.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 80mA – – 4.0 V Base–Emitter ON Voltage VBE(on) VCE = 3V, IC = 4A – – 2.8 V
Dynamic Characteristics
Small–Signal Current Gain hfe VCE = 3V, IC = 3A, f = 1kHz 300 – – Magnitude of Common Emitter |hfe| VCE = 3V, IC = 3A, f = 1MHz 4.0 – – MHz Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance Cob pF NTE243 VCB = 10V, IE = 0, f = 0.1MHz – – 200 NTE244 – – 300 pF Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE243 C
.135 (3.45) Max .350 (8.89) .875 (22.2)
B
Dia Max Seating Plane
E
.312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16)
NTE244
.215 (5.45) .665 (16.9) .156 (3.96) Dia
C
(2 Holes) .430
B
(10.92) .188 (4.8) R Max .525 (13.35) R Max
E
Base Collector/Case
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics
(Note 1) DC Current Gain hFE VCE = 3V, IC = 4A 750 – 18000 VCE = 3V, IC = 8A 100 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 16mA – – 2.0 V IC = 8A, IB = 80mA – – 3.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 80mA – – 4.0 V Base–Emitter ON Voltage VBE(on) VCE = 3V, IC = 4A – – 2.8 V
Dynamic Characteristics
Small–Signal Current Gain hfe VCE = 3V, IC = 3A, f = 1kHz 300 – – Magnitude of Common Emitter |hfe| VCE = 3V, IC = 3A, f = 1MHz 4.0 – – MHz Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance Cob pF NTE243 VCB = 10V, IE = 0, f = 0.1MHz – – 200 NTE244 – – 300 pF Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE243 C
.135 (3.45) Max .350 (8.89) .875 (22.2)
B
Dia Max Seating Plane
E
.312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16)
NTE244
.215 (5.45) .665 (16.9) .156 (3.96) Dia
C
(2 Holes) .430
B
(10.92) .188 (4.8) R Max .525 (13.35) R Max
E
Base Collector/Case