Datasheet BAV199 (Nexperia) - 5

Nexperia BAV199 Low-leakage double diode 11. Test information
tr tp t D.U.T. 10 % + I R F trr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns
Fig. 6. Reverse recovery time test circuit and waveforms
I 1 kΩ 450 Ω I V 90 % RS = 50 Ω OSCILLOSCOPE D.U.T. VFR Ri = 50 Ω 10 % t t tr tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig. 7. Forward recovery voltage test circuit and waveforms Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV199 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 1 September 2020 5 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents