Datasheet 2N5088, 2N5089, MMBT5088, MMBT5089 (ON Semiconductor) - 4

(continued) V CE = 5.0 V
125 °C 1000
800
600 25 °C 400
-40 °C 200
0
0.01 0.03 0.1 0.3
1
3
10
30
I C -COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation
Voltage vs Collector Current
1
-40 °C 0.8
0.6 25 °C
125 °C 0.4 β = 10 0.2
0.1 1
10
I C -COLLECTOR CURRENT (mA) 100 VCESAT -COLLECTOR-EMITTER VOLTAGE (V) 1200 Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 β = 10 0.2
125 °C 0.15
25 °C 0.1 -40 °C 0.05 VBEON-BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain
vs Collector Current 0.1 1
10
I C -COLLECTOR CURRENT (mA) 1
0.8 -40 °C
25 °C 0.6
125 °C 0.4
V CE = 5.0 V 0.2
0.1 1
10
I C -COLLECTOR CURRENT (mA) 10
VCB = 45V 1 0.1
25 100 Base-Emitter ON Voltage vs
Collector Current Collector-Cutoff Current
vs Ambient Temperature
I CBO -COLLE CTOR CURRENT (nA) VBESAT -COLLECTOR-EMITTER VOLTAGE (V) h FE -TYPICAL PULSED CURRENT GAIN Typical Characteristics 50
75
100
125
T A -AMBIE NT TEMP ERATURE ( ° C) 150 40 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier