Datasheet FDN359AN (Fairchild) - 3
| Fabricante | Fairchild |
| Descripción | N-Channel Logic Level PowerTrench MOSFET |
| Páginas / Página | 6 / 3 — Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. … |
| Formato / tamaño de archivo | PDF / 288 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Units. OFF CHARACTERISTICS. ON CHARACTERISTICS
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Electrical Characteristics
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 30 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = 250 µA, Referenced to 25 oC 23 mV/ oC DSS J D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate - Body Leakage, Forward V = 20 V,V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS
ON CHARACTERISTICS
(Note) V Gate Threshold Voltage V = V , I = 250 µA 1 1.6 3 V GS(th) DS GS D ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 oC -4 mV/ oC GS(th) J D R Static Drain-Source On-Resistance V = 10 V, I = 2.7 A 0.037 0.046 Ω DS(ON) GS D T =125°C 0.055 0.075
J
V = 4.5 V, I = 2.4 A 0.049 0.06 GS D I On-State Drain Current V = 10 V, V = 5 V 15 A D(ON) GS DS g Forward Transconductance V = 5 V, I = 2.7 A 9.5 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 10 V, V = 0 V, 480 pF iss DS GS f = 1.0 MHz C Output Capacitance 120 pF oss C Reverse Transfer Capacitance 45 pF rss
SWITCHING CHARACTERISTICS
(Note) t Turn - On Delay Time V = 5 V, I = 1 A, 6 12 ns D(on) DD D V = 4.5 V, R = 6 Ω t Turn - On Rise Time GS GEN 13 24 ns r t Turn - Off Delay Time 15 27 ns D(off) t Turn - Off Fall Time 4 10 ns f Q Total Gate Charge V = 10 V, I = 2.7 A, 5 7 nC g DS D V = 5 V GS Q Gate-Source Charge 1.4 nC gs Q Gate-Drain Charge 1.6 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current 0.42 A S V Drain-Source Diode Forward Voltage V = 0 V, I = 0.42 A (Note) 0.65 1.2 V SD GS S Note: 1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by JA θJC design while Rθ is determined by the user's board design. CA Typical Rθ using the board layouts shown below on FR-4 PCB in a still air environment : JA a. 250oC/W when mounted on b. 270oC/W when mounted on a 0.02 in2 pad of 2oz Cu. a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 30 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = 250 µA, Referenced to 25 oC 23 mV/ oC DSS J D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate - Body Leakage, Forward V = 20 V,V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS
ON CHARACTERISTICS
(Note) V Gate Threshold Voltage V = V , I = 250 µA 1 1.6 3 V GS(th) DS GS D ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 oC -4 mV/ oC GS(th) J D R Static Drain-Source On-Resistance V = 10 V, I = 2.7 A 0.037 0.046 Ω DS(ON) GS D T =125°C 0.055 0.075
J
V = 4.5 V, I = 2.4 A 0.049 0.06 GS D I On-State Drain Current V = 10 V, V = 5 V 15 A D(ON) GS DS g Forward Transconductance V = 5 V, I = 2.7 A 9.5 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 10 V, V = 0 V, 480 pF iss DS GS f = 1.0 MHz C Output Capacitance 120 pF oss C Reverse Transfer Capacitance 45 pF rss
SWITCHING CHARACTERISTICS
(Note) t Turn - On Delay Time V = 5 V, I = 1 A, 6 12 ns D(on) DD D V = 4.5 V, R = 6 Ω t Turn - On Rise Time GS GEN 13 24 ns r t Turn - Off Delay Time 15 27 ns D(off) t Turn - Off Fall Time 4 10 ns f Q Total Gate Charge V = 10 V, I = 2.7 A, 5 7 nC g DS D V = 5 V GS Q Gate-Source Charge 1.4 nC gs Q Gate-Drain Charge 1.6 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current 0.42 A S V Drain-Source Diode Forward Voltage V = 0 V, I = 0.42 A (Note) 0.65 1.2 V SD GS S Note: 1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by JA θJC design while Rθ is determined by the user's board design. CA Typical Rθ using the board layouts shown below on FR-4 PCB in a still air environment : JA a. 250oC/W when mounted on b. 270oC/W when mounted on a 0.02 in2 pad of 2oz Cu. a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2