Datasheet TCET1100, TCET1100G (Vishay) - 3
| Fabricante | Vishay |
| Descripción | Optocoupler, Phototransistor Output, High Temperature |
| Páginas / Página | 9 / 3 — TCET1100, TCET1100G. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST … |
| Formato / tamaño de archivo | PDF / 142 Kb |
| Idioma del documento | Inglés |
TCET1100, TCET1100G. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST CONDITION. SYMBOL. MIN. TYP. MAX. UNIT. INPUT. OUTPUT. COUPLER. Note
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TCET1100, TCET1100G
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage IF = 50 mA VF - 1.25 1.6 V Junction capacitance VR = 0, f = 1 MHz Cj - 50 - pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 70 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V Collector emitter cut-off current VCE = 20 V, IF = 0 A, E = 0 ICEO - 10 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz Coupling capacitance f = 1 MHz Ck - 0.3 - pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements
CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
TCET1101G CTR 13 30 - % TCET1102, CTR 22 45 - % TCET1102G VCE = 5 V, IF = 1 mA TCET1103, CTR 34 70 - % TCET1103G TCET1104G CTR 56 90 - % TCET1100, CTR 50 - 600 % TCET1100G TCET1106, CTR 100 - 300 % TCET1106G TCET1107, VCE = 5 V, IF = 5 mA CTR 80 - 160 % TCET1107G IC/IF TCET1108, CTR 130 - 260 % TCET1108G TCET1109, CTR 200 - 400 % TCET1109G TCET1101, CTR 40 - 80 % TCET1101G TCET1102, CTR 63 - 125 % TCET1102G VCE = 5 V, IF = 10 mA TCET1103, CTR 100 - 200 % TCET1103G TCET1104, CTR 160 - 320 % TCET1104G Rev. 2.4, 13-Jan-2021
3
Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage IF = 50 mA VF - 1.25 1.6 V Junction capacitance VR = 0, f = 1 MHz Cj - 50 - pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 70 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V Collector emitter cut-off current VCE = 20 V, IF = 0 A, E = 0 ICEO - 10 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz Coupling capacitance f = 1 MHz Ck - 0.3 - pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements
CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
TCET1101G CTR 13 30 - % TCET1102, CTR 22 45 - % TCET1102G VCE = 5 V, IF = 1 mA TCET1103, CTR 34 70 - % TCET1103G TCET1104G CTR 56 90 - % TCET1100, CTR 50 - 600 % TCET1100G TCET1106, CTR 100 - 300 % TCET1106G TCET1107, VCE = 5 V, IF = 5 mA CTR 80 - 160 % TCET1107G IC/IF TCET1108, CTR 130 - 260 % TCET1108G TCET1109, CTR 200 - 400 % TCET1109G TCET1101, CTR 40 - 80 % TCET1101G TCET1102, CTR 63 - 125 % TCET1102G VCE = 5 V, IF = 10 mA TCET1103, CTR 100 - 200 % TCET1103G TCET1104, CTR 160 - 320 % TCET1104G Rev. 2.4, 13-Jan-2021
3
Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000