Datasheet ADG511, ADG512, ADG513 (Analog Devices) - 2

ADG511/ADG512/ADG513–SPECIFICATIONS1 Dual Supply (VDD = +5 V 10%, VSS = –5 V 10%, GND = 0 V, unless otherwise noted) B Versions T Version –40 C to –55 C to Parameter 25 C +85 C 25 C +125 C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS VDD to VSS V RON 30 30 Ω typ VD = ± 3.5 V, IS = –10 mA; 50 50 Ω max VDD = +4.5 V, VSS = –4.5 V LEAKAGE CURRENTS VDD = +5.5 V, VSS = –5.5 V Source OFF Leakage IS (OFF) ±0.025 ±0.025 nA typ VD = ± 4.5 V, VS = ⫿4.5 V; ±0.1 ±2.5 ±0.1 ±2.5 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.025 ±0.025 nA typ VD = ± 4.5 V, VS = ⫿4.5 V; ±0.1 ±2.5 ±0.1 ±2.5 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.05 ±0.05 nA typ VD = VS = ± 4.5 V; ±0.2 ±5 ±0.2 ±5 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current IINL or IINH 0.005 0.005 µA typ VIN = VINL or VINH ±0.1 ±0.1 µA max DYNAMIC CHARACTERISTICS2 tON 200 200 ns typ RL = 300 Ω. CL = 35 pF; 375 375 ns max VS = ± 3 V; Test Circuit 4 tOFF 120 120 ns typ RL = 300 Ω. CL = 35 pF; 150 150 ns max VS = ± 3 V; Test Circuit 4 Break-Before-Make Time 100 100 ns typ RL = 300 Ω, CL = 35 pF; Delay, tD (ADG513 Only) VS1 = VS2 = 3 V; Test Circuit 5 Charge Injection 11 11 pC typ VS = 0 V, RS = 0 Ω, CL = 10 nF; Test Circuit 6 OFF Isolation 68 68 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 Channel-to-Channel Crosstalk 85 85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 8 CS (OFF) 9 9 pF typ f = 1 MHz CD (OFF) 9 9 pF typ f = 1 MHz CD, CS (ON) 35 35 pF typ f = 1 MHz POWER REQUIREMENTS VDD +4.5/5.5 +4.5/5.5 V min/max VSS –4.5/–5.5 –4.5/–5.5 V min/max IDD 0.0001 0.0001 µA typ VDD = +5.5 V, VSS = –5.5 V 1 1 µA max Digital Inputs = 0 V or 5 V ISS 0.0001 0.0001 µA typ 1 1 µA max NOTES 1Temperature ranges are as follows: B Versions –40°C to +85°C; T Version –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. C