ADG431/ADG432/ADG433ABSOLUTE MAXIMUM RATINGS Plastic Package, Power Dissipation . 470 mW (T θ A = 25°C unless otherwise noted.) JA, Thermal Impedance . 117°C/W VDD to VSS . 44 V Lead Temperature, Soldering (10 sec) . 260°C VDD to GND . –0.3 V to +25 V SOIC Package, Power Dissipation . 600 mW VSS to GND . +0.3 V to –25 V θJA, Thermal Impedance . 77°C/W VL to GND . –0.3 V to VDD + 0.3 V Lead Temperature, Soldering Analog, Digital Inputs2 . VSS – 2 V to VDD + 2 V or Vapor Phase (60 sec) . 215°C 30 mA, Whichever Occurs First Infrared (15 sec) . 220°C Continuous Current, S or D . 30 mA NOTES Peak Current, S or D . 100 mA 1Stresses above those listed under Absolute Maximum Ratings may cause perma- (Pulsed at 1 ms, 10% Duty Cycle max) nent damage to the device. This is a stress rating only; functional operation of the Operating Temperature Range device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating Industrial (B Version) . –40°C to +85°C conditions for extended periods may affect device reliability. Only one absolute Storage Temperature Range . –65°C to +150°C maximum rating may be applied at any one time. Junction Temperature . 150°C 2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily WARNING! accumulate on the human body and test equipment and can discharge without detection. Although the ADG431/ADG432/ADG433 features proprietary ESD protection circuitry, perma- nent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD SENSITIVE DEVICE ESD precautions are recommended to avoid performance degradation or loss of functionality. PIN CONFIGURATIONORDERING GUIDE(DIP/SOIC)ModelTemperature RangePackage Option1 ADG431BN –40°C to +85°C N-16 IN1 116 IN2 ADG431BR –40°C to +85°C R-16A D1 215 D2 ADG431ABR –40°C to +85°C R-16A2 ADG431S1 314 S2ADG432 ADG432BN –40°C to +85°C N-16 V4ADG43313SSVDD ADG432BR –40°C to +85°C R-16A TOP VIEWGND 5 (Not to Scale) 12 VL ADG432ABR –40°C to +85°C R-16A2 S4 611 S3 ADG433BN –40°C to +85°C N-16 D4 710 D3 ADG433BR –40°C to +85°C R-16A IN4 89IN3 ADG433ABR –40°C to +85°C R-16A2 NOTES 1N = Plastic DIP; R = 0.15" Small Outline IC (SOIC). 2Trench isolated, latch-up proof parts. See Trench Isolation section. TERMINOLOGY VDD Most positive power supply potential. CS (OFF) “OFF” switch source capacitance. VSS Most negative power supply potential in dual CD (OFF) “OFF” switch drain capacitance. supplies. In single supply applications, it may be CD, CS (ON) “ON” switch capacitance. connected to GND. CIN Input Capacitance to ground of a digital input. VL Logic power supply (5 V). tON Delay between applying the digital control input GND Ground (0 V) reference. and the output switching on. S Source terminal. May be an input or output. tOFF Delay between applying the digital control input D Drain terminal. May be an input or output. and the output switching off. IN Logic control input. tD “OFF” time or “ON” time measured between the RON Ohmic resistance between D and S. 90% points of both switches, when switching RON vs. VD (VS) The variation in RON due to a change in the ana- from one address state to another. log input voltage with a constant load current. Crosstalk A measure of unwanted signal which is coupled RON Drift Change in RON vs. temperature. through from one channel to another as a result RON Match Difference between the RON of any two switches. of parasitic capacitance. IS (OFF) Source leakage current with the switch “OFF.” Off Isolation A measure of unwanted signal coupling through an ID (OFF) Drain leakage current with the switch “OFF.” “OFF” switch. ID, IS (ON) Channel leakage current with the switch “ON.” Charge A measure of the glitch impulse transferred from the VD (VS) Analog voltage on terminals D, S. Injection digital input to the analog output during switching. –4– REV. C