Datasheet ADG636 (Analog Devices) - 8

FabricanteAnalog Devices
Descripción1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Páginas / Página16 / 8 — ADG636. Parameter. +25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test …
RevisiónB
Formato / tamaño de archivoPDF / 505 Kb
Idioma del documentoInglés

ADG636. Parameter. +25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments

ADG636 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

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ADG636 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = 3.3 V IDD 0.001 μA typ Digital inputs = 0 V or 3.3 V 1.0 μA max Digital inputs = 0 V or 3.3 V 1 Guaranteed by design; not subject to production test. Rev. B | Page 8 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE