Datasheet ADG1219 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS SPDT in SOT-23 |
| Páginas / Página | 16 / 4 — ADG1219. Version1. Parameters. 25°C. −40°C to +85°C. −40°C to +125°C. … |
| Revisión | A |
| Formato / tamaño de archivo | PDF / 391 Kb |
| Idioma del documento | Inglés |
ADG1219. Version1. Parameters. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments. SINGLE SUPPLY. Table 2. B. Version
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ADG1219 B Version1 Parameters 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.001 μA typ Digital inputs = 0 V or VDD 1.0 μA max IDD 140 μA typ Digital inputs = 5 V 190 μA max ISS 0.001 μA typ Digital inputs = 0 V, 5 V or VDD 1.0 μA max VDD/VSS ±5/±16.5 V |VDD | = |VSS| min/max 1 Temperature range for B version is −40°C to +125°C. 2 Guaranteed by design; not subject to production test.
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2. B Version 1 Parameters 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 300 Ω typ VS = 0 V to 10 V, IS = −1 mA; see Figure 23 475 567 625 Ω max VDD = 10.8 V, VSS = 0 V On Resistance Match Between 4.5 Ω typ VS = 0 V to 10 V, IS = −1 mA Channels, ∆RON 16 26 27 Ω max On Resistance Flatness, RFLAT(ON) 60 Ω typ VS = 3 V, 6 V, 9 V, IS = −1 mA LEAKAGE CURRENTS VDD = 13.2 V Source Off Leakage, IS (Off) ±0.006 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.006 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V; see Figure 25 ±0.2 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS2 Transition Time, tTRANSITION 195 ns typ RL = 300 Ω, CL = 35 pF 250 300 340 ns max VS = 8 V; see Figure 30 tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 150 190 210 ns max VS = 8 V; see Figure 30 tOFF (EN) 145 ns typ RL = 300 Ω, CL = 35 pF 185 220 255 ns max VS = 8 V; see Figure 30 Break-Before-Make Time Delay, tBBM 70 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 8 V; see Figure 31 Charge Injection −0.8 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 −3 dB Bandwidth 400 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 Rev. A | Page 4 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE
ADG1219 B Version1 Parameters 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.001 μA typ Digital inputs = 0 V or VDD 1.0 μA max IDD 140 μA typ Digital inputs = 5 V 190 μA max ISS 0.001 μA typ Digital inputs = 0 V, 5 V or VDD 1.0 μA max VDD/VSS ±5/±16.5 V |VDD | = |VSS| min/max 1 Temperature range for B version is −40°C to +125°C. 2 Guaranteed by design; not subject to production test.
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2. B Version 1 Parameters 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 300 Ω typ VS = 0 V to 10 V, IS = −1 mA; see Figure 23 475 567 625 Ω max VDD = 10.8 V, VSS = 0 V On Resistance Match Between 4.5 Ω typ VS = 0 V to 10 V, IS = −1 mA Channels, ∆RON 16 26 27 Ω max On Resistance Flatness, RFLAT(ON) 60 Ω typ VS = 3 V, 6 V, 9 V, IS = −1 mA LEAKAGE CURRENTS VDD = 13.2 V Source Off Leakage, IS (Off) ±0.006 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.006 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = 1 V or 10 V; see Figure 25 ±0.2 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS2 Transition Time, tTRANSITION 195 ns typ RL = 300 Ω, CL = 35 pF 250 300 340 ns max VS = 8 V; see Figure 30 tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 150 190 210 ns max VS = 8 V; see Figure 30 tOFF (EN) 145 ns typ RL = 300 Ω, CL = 35 pF 185 220 255 ns max VS = 8 V; see Figure 30 Break-Before-Make Time Delay, tBBM 70 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 8 V; see Figure 31 Charge Injection −0.8 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 −3 dB Bandwidth 400 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 Rev. A | Page 4 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE