Datasheet ADG5433, ADG5434 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónHigh Voltage Latch-Up Proof, Triple/Quad SPDT Switches
Páginas / Página24 / 5 — Data Sheet. ADG5433/ADG5434. Parameter. 25°C −40°C to +85°C −40°C to …
RevisiónC
Formato / tamaño de archivoPDF / 428 Kb
Idioma del documentoInglés

Data Sheet. ADG5433/ADG5434. Parameter. 25°C −40°C to +85°C −40°C to +125°C Unit. Test Conditions/Comments. 12 V SINGLE SUPPLY

Data Sheet ADG5433/ADG5434 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments 12 V SINGLE SUPPLY

Línea de modelo para esta hoja de datos

Versión de texto del documento

link to page 16 link to page 16 link to page 16 link to page 17 link to page 17 link to page 17 link to page 17 link to page 16 link to page 6
Data Sheet ADG5433/ADG5434 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Insertion Loss −0.8 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 CS (Off) 15 pF typ VS = 0 V, f = 1 MHz CD (Off) 23 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 52 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +22 V, VSS = −22 V IDD 50 µA typ Digital inputs = 0 V or VDD 70 110 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 26 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 27 30 36 42 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between Channels, 0.3 Ω typ VS = 0 V to 10 V, IS = −10 mA ∆RON 1 1.5 1.6 Ω max On-Resistance Flatness, RFLAT (ON) 5.5 Ω typ VS = 0 V to 10 V, IS = −10 mA 6.5 8 12 Ω max LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.05 nA typ VS = 1 V/10 V, VD = 10 V/1 V ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off) ±0.1 nA typ VS = 1 V/10 V, VD = 10 V/1 V ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.1 nA typ VS = VD = 1 V/10 V; see Figure 26 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 6 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 220 ns typ RL = 300 Ω, CL = 35 pF 290 357 400 ns max VS = 8 V tON (EN) 228 ns typ RL = 300 Ω, CL = 35 pF 289 370 426 ns max VS = 8 V; see Figure 34 tOFF (EN) 90 ns typ RL = 300 Ω, CL = 35 pF 115 131 151 ns max VS = 8 V; see Figure 34 Break-Before-Make Time Delay, tD 106 ns typ RL = 300 Ω, CL = 35 pF 54 ns min VS1 = VS2 = 8 V; see Figure 33 Charge Injection, QINJ 60 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 35 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Rev. C | Page 5 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide