Datasheet ADG5408-EP, ADG5409-EP (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| Páginas / Página | 18 / 3 — Enhanced Product. ADG5408-EP/ADG5409-EP. SPECIFICATIONS ±15 V DUAL … |
| Formato / tamaño de archivo | PDF / 340 Kb |
| Idioma del documento | Inglés |
Enhanced Product. ADG5408-EP/ADG5409-EP. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. Parameter. 25°C. −40°C to +85°C
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Enhanced Product ADG5408-EP/ADG5409-EP SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 13.5 Ω typ VS = ±10 V, IS = −10 mA; see Figure 24 15 18 22 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between 0.3 Ω typ VS = ±10 V, IS = −10 mA Channels, ∆RON 0.8 1.3 1.4 Ω max On-Resistance Flatness, RFLAT (ON) 1.8 Ω typ VS = ±10 V, IS = −10 mA 2.2 2.6 3 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off ) ±0.05 nA typ VS = ±10 V, VD = 10 V; see Figure 27 ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off ) ±0.1 nA typ VS = ±10 V, VD = 10 V; see Figure 27 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 23 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 170 ns typ RL = 300 Ω, CL = 35 pF 217 258 292 ns max VS = 10 V; see Figure 30 tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF 175 213 242 ns max VS = 10 V; see Figure 32 tOFF (EN) 130 ns typ RL = 300 Ω, CL = 35 pF 161 183 198 ns max VS = 10 V; see Figure 32 Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF 13 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection, QINJ 115 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 25 Total Harmonic Distortion + Noise 0.01 % typ RL = 1 kΩ, 15 V p-p, f = 20 Hz to 20 kHz; see Figure 28 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 29 ADG5408-EP 50 MHz typ ADG5409-EP 87 MHz typ Insertion Loss 0.9 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 29 CS (Off ) 15 pF typ VS = 0 V, f = 1 MHz CD (Off ) ADG5408-EP 102 pF typ VS = 0 V, f = 1 MHz ADG5409-EP 50 pF typ VS = 0 V, f = 1 MHz Rev. 0 | Page 3 of 18 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
Enhanced Product ADG5408-EP/ADG5409-EP SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 13.5 Ω typ VS = ±10 V, IS = −10 mA; see Figure 24 15 18 22 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between 0.3 Ω typ VS = ±10 V, IS = −10 mA Channels, ∆RON 0.8 1.3 1.4 Ω max On-Resistance Flatness, RFLAT (ON) 1.8 Ω typ VS = ±10 V, IS = −10 mA 2.2 2.6 3 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off ) ±0.05 nA typ VS = ±10 V, VD = 10 V; see Figure 27 ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off ) ±0.1 nA typ VS = ±10 V, VD = 10 V; see Figure 27 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 23 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 170 ns typ RL = 300 Ω, CL = 35 pF 217 258 292 ns max VS = 10 V; see Figure 30 tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF 175 213 242 ns max VS = 10 V; see Figure 32 tOFF (EN) 130 ns typ RL = 300 Ω, CL = 35 pF 161 183 198 ns max VS = 10 V; see Figure 32 Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF 13 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection, QINJ 115 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 25 Total Harmonic Distortion + Noise 0.01 % typ RL = 1 kΩ, 15 V p-p, f = 20 Hz to 20 kHz; see Figure 28 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 29 ADG5408-EP 50 MHz typ ADG5409-EP 87 MHz typ Insertion Loss 0.9 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Figure 29 CS (Off ) 15 pF typ VS = 0 V, f = 1 MHz CD (Off ) ADG5408-EP 102 pF typ VS = 0 V, f = 1 MHz ADG5409-EP 50 pF typ VS = 0 V, f = 1 MHz Rev. 0 | Page 3 of 18 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE