Datasheet ADG5208, ADG5209 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónHigh Voltage Latch-Up Proof, 4-/8-Channel Multiplexers
Páginas / Página24 / 5 — Data Sheet. ADG5208/ADG5209. Parameter. 25°C. −40°C to +85°C. −40°C to …
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Data Sheet. ADG5208/ADG5209. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments. 12 V SINGLE SUPPLY

Data Sheet ADG5208/ADG5209 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments 12 V SINGLE SUPPLY

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Data Sheet ADG5208/ADG5209 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CS (Off) 2.8 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208 33 pF typ VS = 0 V, f = 1 MHz ADG5209 17 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) ADG5208 36 pF typ VS = 0 V, f = 1 MHz ADG5209 21 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +22 V, VSS = −22 V IDD 50 µA typ Digital inputs = 0 V or VDD 70 110 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 350 Ω typ VS = 0 V to 10 V, IS = −1 mA; see Figure 28 500 610 700 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between 5 Ω typ VS = 0 V to 10 V, IS = −1 mA Channels, ∆RON 20 22 24 Ω max On-Resistance Flatness, RFLAT (ON) 160 Ω typ VS = 0 V to 10 V, IS = −1 mA 280 335 370 Ω max LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/10 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 250 295 335 ns max VS = 8 V; see Figure 33 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 225 280 320 ns max VS = 8 V; see Figure 35 tOFF (EN) 165 ns typ RL = 300 Ω, CL = 35 pF 200 225 245 ns max VS = 8 V; see Figure 35 Break-Before-Make Time Delay, tD 95 ns typ RL = 300 Ω, CL = 35 pF 50 ns min VS1 = VS2 = 8 V; see Figure 34 Charge Injection, QINJ 0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Rev. C | Page 5 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide