Datasheet ADG5208F, ADG5209F (Analog Devices) - 10

FabricanteAnalog Devices
DescripciónFault Protection, −0.4 pC QINJ, 8:1/Dual 4:1 Multiplexers
Páginas / Página27 / 10 — ADG5208F/ADG5209F. Data Sheet. −40°C to. Parameter. +25°C +85°C. +125°C. …
RevisiónA
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Idioma del documentoInglés

ADG5208F/ADG5209F. Data Sheet. −40°C to. Parameter. +25°C +85°C. +125°C. Unit. Test Conditions/Comments

ADG5208F/ADG5209F Data Sheet −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments

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ADG5208F/ADG5209F Data Sheet −40°C to −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 180 ns typ RL = 1 kΩ, CL = 35 pF 230 245 255 ns max VS = 18 V, see Figure 47 tON (EN) 175 ns typ RL = 1 kΩ, CL = 35 pF 225 245 260 ns max VS = 18 V, see Figure 46 tOFF (EN) 105 ns typ RL = 1 kΩ, CL = 35 pF 135 150 150 ns max VS = 18 V, see Figure 46 Break-Before-Make Time Delay, tD 105 ns typ RL = 1 kΩ, CL = 35 pF 65 ns min VS = 18 V, see Figure 45 Overvoltage Response Time, tRESPONSE 60 ns typ RL = 1 kΩ, CL = 5 pF, see Figure 43 80 85 85 ns max Overvoltage Recovery Time, tRECOVERY 1400 ns typ RL = 1 kΩ, CL = 5 pF, see Figure 44 1900 2100 2200 ns max Charge Injection, QINJ −0.9 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF, see Figure 48 Off Isolation −75 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 40 Channel-to-Channel Crosstalk RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 42 Adjacent Channels −75 dB typ Nonadjacent Channels −88 dB typ Total Harmonic Distortion Plus Noise, 0.007 % typ RL = 10 kΩ, VS = 18 V p-p, f = 20 Hz to 20 kHz, THD + N see Figure 39 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF, see Figure 41 ADG5208F 200 MHz typ ADG5209F 300 MHz typ Insertion Loss 10.5 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 41 CS (Off) 3 pF typ VS = 18 V, f = 1 MHz CD (Off) VS = 18 V, f = 1 MHz ADG5208F 12 pF typ ADG5209F 7 pF typ CD (On), CS (On) VS = 18 V, f = 1 MHz ADG5208F 19 pF typ ADG5209F 12 pF typ POWER REQUIREMENTS VDD = 39.6 V; VSS = 0 V; GND = 0 V; digital inputs = 0 V, 5 V, or VDD Normal Mode IDD 1.3 mA typ 2 2 mA max IGND 0.75 mA typ 1.4 1.4 mA max ISS 0.5 mA typ 0.65 0.7 mA max Fault Mode VS = +55 V, −40 V IDD 1.6 mA typ 2.2 2.3 mA max IGND 0.9 mA typ 1.6 1.7 mA max ISS 0.65 mA typ 1.0 1.1 mA max VDD 8 V min GND = 0 V 44 V max GND = 0 V 1 Guaranteed by design; not subject to production test. Rev. A | Page 10 of 27 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx, D, OR Dx ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY THEORY OF OPERATION SWITCH ARCHITECTURE Overvoltage Reaction ESD Performance Trench Isolation FAULT PROTECTION Power-On Protection Power-Off Protection Digital Input Protection APPLICATIONS INFORMATION POWER SUPPLY RAILS POWER SUPPLY SEQUENCING PROTECTION SIGNAL RANGE POWER SUPPLY RECOMMENDATIONS HIGH VOLTAGE SURGE SUPPRESSION LARGE VOLTAGE, HIGH FREQUENCY SIGNALS OUTLINE DIMENSIONS ORDERING GUIDE