Datasheet CPZ28X-1N4678 - CPZ28X-1N4717 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | Zener Diode Die 500mW, 1.8 - 43 VOLT |
| Páginas / Página | 6 / 1 — CPZ28X-1N4678 THRU. CPZ28X-1N4717. Zener Diode Die. w w w. c e n t r a l … |
| Formato / tamaño de archivo | PDF / 793 Kb |
| Idioma del documento | Inglés |
CPZ28X-1N4678 THRU. CPZ28X-1N4717. Zener Diode Die. w w w. c e n t r a l s e m i . c o m. 500mW, 1.8 THRU 43 VOLT
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CPZ28X-1N4678 THRU CPZ28X-1N4717 Zener Diode Die w w w. c e n t r a l s e m i . c o m 500mW, 1.8 THRU 43 VOLT
The CPZ28X-1N4678 thru CPZ28X-1N4717 are silicon Zener diodes ideal for all types of commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
Die Size 13 x 13 MILS Die Thickness 5.5 MILS Anode Bonding Pad Size 7.0 x 7.0 MILS Top Side Metalization Ti/Al – 13,000Å Back Side Metalization Au-As – 9,000Å Scribe Alley Width 1.97 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 101,184 BACKSIDE CATHODE R0
MAXIMUM RATINGS: SYMBOL UNITS
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Zener Maximum Maximum Maximum Test Voltage Reverse Leakage Voltage Regulator Current V Current Change* Current Type Z @ IZT MIN NOM MAX IZT IR @ VR ΔVZ IZM V V V μA μA V V mA
CPZ28X-1N4678 1.710 1.8 1.890 50 7.5 1.0 0.70 120.0 CPZ28X-1N4679 1.900 2.0 2.100 50 5.0 1.0 0.70 110.0 CPZ28X-1N4680 2.090 2.2 2.310 50 4.0 1.0 0.75 100.0 CPZ28X-1N4681 2.280 2.4 2.520 50 2.0 1.0 0.80 95.0 CPZ28X-1N4682 2.565 2.7 2.835 50 1.0 1.0 0.85 90.0 CPZ28X-1N4683 2.850 3.0 3.150 50 0.8 1.0 0.90 85.0 CPZ28X-1N4684 3.135 3.3 3.465 50 7.5 1.5 0.95 80.0 CPZ28X-1N4685 3.420 3.6 3.780 50 7.5 2.0 0.95 75.0 CPZ28X-1N4686 3.705 3.9 4.095 50 5.0 2.0 0.97 70.0 CPZ28X-1N4687 4.085 4.3 4.515 50 4.0 2.0 0.99 65.0 CPZ28X-1N4688 4.465 4.7 4.935 50 10 3.0 0.99 60.0 CPZ28X-1N4689 4.845 5.1 5.355 50 10 3.0 0.97 55.0 CPZ28X-1N4690 5.320 5.6 5.880 50 10 4.0 0.96 50.0 CPZ28X-1N4691 5.890 6.2 6.510 50 10 5.0 0.95 45.0 CPZ28X-1N4692 6.460 6.8 7.140 50 10 5.1 0.90 35.0 CPZ28X-1N4693 7.125 7.5 7.875 50 10 5.7 0.75 31.8 CPZ28X-1N4694 7.790 8.2 8.610 50 1.0 6.2 0.50 29.0 * ΔVZ=VZ @ 100μA Minus VZ @ 10μA R0 (26-June 2017)
The CPZ28X-1N4678 thru CPZ28X-1N4717 are silicon Zener diodes ideal for all types of commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
Die Size 13 x 13 MILS Die Thickness 5.5 MILS Anode Bonding Pad Size 7.0 x 7.0 MILS Top Side Metalization Ti/Al – 13,000Å Back Side Metalization Au-As – 9,000Å Scribe Alley Width 1.97 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 101,184 BACKSIDE CATHODE R0
MAXIMUM RATINGS: SYMBOL UNITS
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Zener Maximum Maximum Maximum Test Voltage Reverse Leakage Voltage Regulator Current V Current Change* Current Type Z @ IZT MIN NOM MAX IZT IR @ VR ΔVZ IZM V V V μA μA V V mA
CPZ28X-1N4678 1.710 1.8 1.890 50 7.5 1.0 0.70 120.0 CPZ28X-1N4679 1.900 2.0 2.100 50 5.0 1.0 0.70 110.0 CPZ28X-1N4680 2.090 2.2 2.310 50 4.0 1.0 0.75 100.0 CPZ28X-1N4681 2.280 2.4 2.520 50 2.0 1.0 0.80 95.0 CPZ28X-1N4682 2.565 2.7 2.835 50 1.0 1.0 0.85 90.0 CPZ28X-1N4683 2.850 3.0 3.150 50 0.8 1.0 0.90 85.0 CPZ28X-1N4684 3.135 3.3 3.465 50 7.5 1.5 0.95 80.0 CPZ28X-1N4685 3.420 3.6 3.780 50 7.5 2.0 0.95 75.0 CPZ28X-1N4686 3.705 3.9 4.095 50 5.0 2.0 0.97 70.0 CPZ28X-1N4687 4.085 4.3 4.515 50 4.0 2.0 0.99 65.0 CPZ28X-1N4688 4.465 4.7 4.935 50 10 3.0 0.99 60.0 CPZ28X-1N4689 4.845 5.1 5.355 50 10 3.0 0.97 55.0 CPZ28X-1N4690 5.320 5.6 5.880 50 10 4.0 0.96 50.0 CPZ28X-1N4691 5.890 6.2 6.510 50 10 5.0 0.95 45.0 CPZ28X-1N4692 6.460 6.8 7.140 50 10 5.1 0.90 35.0 CPZ28X-1N4693 7.125 7.5 7.875 50 10 5.7 0.75 31.8 CPZ28X-1N4694 7.790 8.2 8.610 50 1.0 6.2 0.50 29.0 * ΔVZ=VZ @ 100μA Minus VZ @ 10μA R0 (26-June 2017)