Datasheet CDM22010-650 (Central Semiconductor) - 2
| Fabricante | Central Semiconductor |
| Descripción | SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT |
| Páginas / Página | 4 / 2 — CDM22010-650. SILICON. N-CHANNEL POWER MOSFET. 10 AMP, 650 VOLT. … |
| Formato / tamaño de archivo | PDF / 887 Kb |
| Idioma del documento | Inglés |
CDM22010-650. SILICON. N-CHANNEL POWER MOSFET. 10 AMP, 650 VOLT. ELECTRICAL CHARACTERISTICS - Continued:. SYMBOL TEST. CONDITIONS
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CDM22010-650 SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP UNITS
Qg(tot) VDS=520V, VGS=10V, ID=10A (Note 2) 20 nC Qgs VDS=520V, VGS=10V, ID=10A (Note 2) 8.0 nC Qgd VDS=520V, VGS=10V, ID=10A (Note 2) 7.0 nC td VDD=325V, ID=10A, RG=25Ω (Note 2) 20 ns tr VDD=325V, ID=10A, RG=25Ω (Note 2) 33 ns ts VDD=325V, ID=10A, RG=25Ω (Note 2) 57 ns tf VDD=325V, ID=10A, RG=25Ω (Note 2) 36 ns trr VGS=0, IS=10A, di/dt=100A/μs (Note 2) 570 ns Qrr VGS=0, IS=10A, di/dt=100A/μs (Note 2) 4.7 μC Note 2: Pulse Width < 300μs, Duty Cycle < 2%
TO-220 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE:
1) Gate 2) Drain 3) Source Tab) Drain
MARKING CODE: CDM10-650
R1 (18-August 2014)
w w w. c e n t r a l s e m i . c o m
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP UNITS
Qg(tot) VDS=520V, VGS=10V, ID=10A (Note 2) 20 nC Qgs VDS=520V, VGS=10V, ID=10A (Note 2) 8.0 nC Qgd VDS=520V, VGS=10V, ID=10A (Note 2) 7.0 nC td VDD=325V, ID=10A, RG=25Ω (Note 2) 20 ns tr VDD=325V, ID=10A, RG=25Ω (Note 2) 33 ns ts VDD=325V, ID=10A, RG=25Ω (Note 2) 57 ns tf VDD=325V, ID=10A, RG=25Ω (Note 2) 36 ns trr VGS=0, IS=10A, di/dt=100A/μs (Note 2) 570 ns Qrr VGS=0, IS=10A, di/dt=100A/μs (Note 2) 4.7 μC Note 2: Pulse Width < 300μs, Duty Cycle < 2%
TO-220 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE:
1) Gate 2) Drain 3) Source Tab) Drain
MARKING CODE: CDM10-650
R1 (18-August 2014)
w w w. c e n t r a l s e m i . c o m