Datasheet BZV55C2V4 THRU BZV55C75 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | SURFACE MOUNT SILICON ZENER DIODES 0.5 WATT, 2.4 THRU 75 VOLT ± 5% TOLERANCE |
| Páginas / Página | 3 / 1 — BZV55C2V4 THRU BZV55C75. SURFACE MOUNT SILICON. w w w. c e n t r a l s e … |
| Formato / tamaño de archivo | PDF / 270 Kb |
| Idioma del documento | Inglés |
BZV55C2V4 THRU BZV55C75. SURFACE MOUNT SILICON. w w w. c e n t r a l s e m i . c o m. ZENER DIODES. DESCRIPTION:
Línea de modelo para esta hoja de datos
Versión de texto del documento
BZV55C2V4 THRU BZV55C75 SURFACE MOUNT SILICON w w w. c e n t r a l s e m i . c o m ZENER DIODES DESCRIPTION: 0.5 WATT, 2.4 THRU 75 VOLT ± 5% TOLERANCE
The CENTRAL SEMICONDUCTOR BZV55C2V4 series are high quality, highly reliable silicon Zener diodes designed for use in all types of commercial, industrial, entertainment, computer, and automotive applications.
MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Average Forward Current IO 250 mA Peak Repetitive Forward Current IFRM 250 mA Power Dissipation (TL=50°C) PD 500 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
ZENER MAXIMUM MAXIMUM TEST MAXIMUM ZENER VOLTAGE REVERSE ZENER CURRENT IMPEDANCE TYPE VZ @ IZT CURRENT CURRENT MIN NOM MAX IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM V V V mA Ω Ω mA μA V mA
BZV55C2V4 2.280 2.4 2.520 5.0 100 600 1.0 50 1.0 208 BZV55C2V7 2.565 2.7 2.835 5.0 100 600 1.0 20 1.0 185 BZV55C3V0 2.850 3.0 3.150 5.0 95 600 1.0 10 1.0 167 BZV55C3V3 3.135 3.3 3.465 5.0 95 600 1.0 5.0 1.0 152 BZV55C3V6 3.420 3.6 3.780 5.0 90 600 1.0 5.0 1.0 139 BZV55C3V9 3.705 3.9 4.095 5.0 90 600 1.0 3.0 1.0 128 BZV55C4V3 4.085 4.3 4.515 5.0 90 600 1.0 3.0 1.0 116 BZV55C4V7 4.465 4.7 4.935 5.0 80 500 1.0 3.0 2.0 106 BZV55C5V1 4.845 5.1 5.355 5.0 60 480 1.0 2.0 2.0 96 BZV55C5V6 5.320 5.6 5.880 5.0 40 400 1.0 1.0 2.0 89 BZV55C6V2 5.890 6.2 6.510 5.0 10 150 1.0 3.0 4.0 81 BZV55C6V8 6.460 6.8 7.140 5.0 15 80 1.0 2.0 4.0 74 BZV55C7V5 7.125 7.5 7.875 5.0 15 80 1.0 1.0 5.0 67 BZV55C8V2 7.790 8.2 8.610 5.0 15 80 1.0 0.7 5.0 61 BZV55C9V1 8.645 9.1 9.555 5.0 15 100 1.0 0.5 6.0 55 BZV55C10 9.500 10 10.50 5.0 20 150 1.0 0.1 7.0 50 BZV55C11 10.45 11 11.55 5.0 20 150 1.0 0.1 8.0 45 R3 (13-March 2015)
The CENTRAL SEMICONDUCTOR BZV55C2V4 series are high quality, highly reliable silicon Zener diodes designed for use in all types of commercial, industrial, entertainment, computer, and automotive applications.
MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Average Forward Current IO 250 mA Peak Repetitive Forward Current IFRM 250 mA Power Dissipation (TL=50°C) PD 500 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
ZENER MAXIMUM MAXIMUM TEST MAXIMUM ZENER VOLTAGE REVERSE ZENER CURRENT IMPEDANCE TYPE VZ @ IZT CURRENT CURRENT MIN NOM MAX IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM V V V mA Ω Ω mA μA V mA
BZV55C2V4 2.280 2.4 2.520 5.0 100 600 1.0 50 1.0 208 BZV55C2V7 2.565 2.7 2.835 5.0 100 600 1.0 20 1.0 185 BZV55C3V0 2.850 3.0 3.150 5.0 95 600 1.0 10 1.0 167 BZV55C3V3 3.135 3.3 3.465 5.0 95 600 1.0 5.0 1.0 152 BZV55C3V6 3.420 3.6 3.780 5.0 90 600 1.0 5.0 1.0 139 BZV55C3V9 3.705 3.9 4.095 5.0 90 600 1.0 3.0 1.0 128 BZV55C4V3 4.085 4.3 4.515 5.0 90 600 1.0 3.0 1.0 116 BZV55C4V7 4.465 4.7 4.935 5.0 80 500 1.0 3.0 2.0 106 BZV55C5V1 4.845 5.1 5.355 5.0 60 480 1.0 2.0 2.0 96 BZV55C5V6 5.320 5.6 5.880 5.0 40 400 1.0 1.0 2.0 89 BZV55C6V2 5.890 6.2 6.510 5.0 10 150 1.0 3.0 4.0 81 BZV55C6V8 6.460 6.8 7.140 5.0 15 80 1.0 2.0 4.0 74 BZV55C7V5 7.125 7.5 7.875 5.0 15 80 1.0 1.0 5.0 67 BZV55C8V2 7.790 8.2 8.610 5.0 15 80 1.0 0.7 5.0 61 BZV55C9V1 8.645 9.1 9.555 5.0 15 100 1.0 0.5 6.0 55 BZV55C10 9.500 10 10.50 5.0 20 150 1.0 0.1 7.0 50 BZV55C11 10.45 11 11.55 5.0 20 150 1.0 0.1 8.0 45 R3 (13-March 2015)