Datasheet BF820, BF822 (Nexperia) - 4

link to page 4 link to page 4 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter BF820 − 300 V BF822 − 250 V VCEO collector-emitter voltage open base BF820 − 300 V BF822 − 250 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 50 mA ICM peak collector current − 100 mA IBM peak base current − 50 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current IE = 0; VCB = 200 V − 10 nA IE = 0; VCB = 200 V; Tj =150 °C − 10 µA IEBO emitter-base cut-off current IC = 0; VEB = 5 V − 50 nA hFE DC current gain IC = 25 mA; VCE = 20 V 50 − VCEsat collector-emitter saturation IC = 30 mA; IB = 5 mA − 600 mV voltage Cre feedback capacitance IC = Ic = 0; VCB = 30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz 2004 Jan 16 3 Document Outline Features Applications Description Marking Pinning Ordering information Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers