Datasheet AO4468 (Alpha & Omega) - 2
| Fabricante | Alpha & Omega |
| Descripción | 30V N-Channel MOSFET |
| Páginas / Página | 5 / 2 — AO4468. Electrical Characteristics (TJ=25°C unless otherwise noted). … |
| Formato / tamaño de archivo | PDF / 323 Kb |
| Idioma del documento | Inglés |
AO4468. Electrical Characteristics (TJ=25°C unless otherwise noted). Symbol. Parameter. Conditions. Min. Typ. Max. Units
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AO4468 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV I DSS Drain-Source Breakdown Voltage D=250µA, VGS=0V 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current µA TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS=±16V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V I V D(ON) On state drain current GS=10V, VDS=5V 50 A VGS=10V, ID=10.5A 14 17 mΩ RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20 24 VGS=4.5V, ID=9A 18 23 mΩ g Forward Transconductance V FS DS=5V, ID=10.5A 36 S V Diode Forward Voltage I SD S=1A,VGS=0V 0.75 1 V IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 740 888 pF C V oss Output Capacitance GS=0V, VDS=15V, f=1MHz 110 145 pF Crss Reverse Transfer Capacitance 82 115 pF R Gate resistance V g GS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15 nC Qg(4.5V) Total Gate Charge 7.5 nC VGS=10V, VDS=15V, ID=10.5A Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 5 ns t Tu T r u n- n On O n Ri R se e Ti T me m V =10V, V =15V, R =1.45 r GS=10V, VDS=15V, RL=1.4 Ω 5 , 3. 3 5 ns n t R D(off) Turn-Off DelayTime GEN=3Ω 19 ns tf Turn-Off Fall Time 3.5 ns trr IF=10.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time 18 22 ns Qrr Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/µs 9 12 nC A. The value of Rθ is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤ 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25°C. J D. The Rθ is the sum of the thermal impedence from junction to lead R and lead to ambient. JA θJL E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.0: July 2013
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BV I DSS Drain-Source Breakdown Voltage D=250µA, VGS=0V 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current µA TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS=±16V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V I V D(ON) On state drain current GS=10V, VDS=5V 50 A VGS=10V, ID=10.5A 14 17 mΩ RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20 24 VGS=4.5V, ID=9A 18 23 mΩ g Forward Transconductance V FS DS=5V, ID=10.5A 36 S V Diode Forward Voltage I SD S=1A,VGS=0V 0.75 1 V IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 740 888 pF C V oss Output Capacitance GS=0V, VDS=15V, f=1MHz 110 145 pF Crss Reverse Transfer Capacitance 82 115 pF R Gate resistance V g GS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15 nC Qg(4.5V) Total Gate Charge 7.5 nC VGS=10V, VDS=15V, ID=10.5A Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 5 ns t Tu T r u n- n On O n Ri R se e Ti T me m V =10V, V =15V, R =1.45 r GS=10V, VDS=15V, RL=1.4 Ω 5 , 3. 3 5 ns n t R D(off) Turn-Off DelayTime GEN=3Ω 19 ns tf Turn-Off Fall Time 3.5 ns trr IF=10.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time 18 22 ns Qrr Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/µs 9 12 nC A. The value of Rθ is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤ 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25°C. J D. The Rθ is the sum of the thermal impedence from junction to lead R and lead to ambient. JA θJL E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.0: July 2013
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Page 2 of 5