Datasheet FDD6637 (Fairchild) - 6
| Fabricante | Fairchild |
| Descripción | 35V P-Channel PowerTrench MOSFET |
| Páginas / Página | 7 / 6 — FDD. Typical Characteristics. 663. 7 35. V P-. IST. IZ L. T TH. O N. EN … |
| Formato / tamaño de archivo | PDF / 126 Kb |
| Idioma del documento | Inglés |
FDD. Typical Characteristics. 663. 7 35. V P-. IST. IZ L. T TH. O N. EN SI. r(t),. l P. R T. t1, TIME (sec). e rTr
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FDD Typical Characteristics 663 7 35
1
E C V P- E N
D = 0.5
IV A T
RθJA(t) = r(t) * RθJA
C IST
0.2
E S
RθJA = 96 °C/W
F E
0.1
F R
0.1
C E L D A
0.05
E h M
P(pk)
IZ L ER
0.02
a A
t1
nn M
0.01 0.01
R T TH
t2
O N EN SI
TJ - TA = P * RθJA(t)
e
SINGLE PULSE
r(t), N l P A
Duty Cycle, D = t1 / t2
R T
0.001
o
0.001 0.01 0.1 1 10 100 1000
w t1, TIME (sec) e rTr Figure 13. Transient Thermal Response Curve e Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. n c h
®
M OS FET
FDD6637 Rev. C(W) www.fairchildsemi.com
1
E C V P- E N
D = 0.5
IV A T
RθJA(t) = r(t) * RθJA
C IST
0.2
E S
RθJA = 96 °C/W
F E
0.1
F R
0.1
C E L D A
0.05
E h M
P(pk)
IZ L ER
0.02
a A
t1
nn M
0.01 0.01
R T TH
t2
O N EN SI
TJ - TA = P * RθJA(t)
e
SINGLE PULSE
r(t), N l P A
Duty Cycle, D = t1 / t2
R T
0.001
o
0.001 0.01 0.1 1 10 100 1000
w t1, TIME (sec) e rTr Figure 13. Transient Thermal Response Curve e Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. n c h
®
M OS FET
FDD6637 Rev. C(W) www.fairchildsemi.com