Datasheet FDD6637 (Fairchild) - 4

FDD Typical Characteristics 663 7
100 2.4
35
V -6.0V VGS = -3.5V GS = -10V -5.0V
E
2.2 -4.5V
V P- C
80
N ) A A
2
T T ( IS S D EN
-4.0V
E
1.8
C
60
E IZ -R N h URR AL O
1.6 -4.0V
a N C RM
-4.5V 40 -3.5V
RCE nn
1.4 -5.0V
RAI NO U , D SO
-6.0V
D-I N-
1.2
e
20 -3.0V
AI
-8.0V
l P
-10V
DR
1
o
0 0.8
w
0 1 2 3 4 0 20 40 60 80 100
-V e DS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) rTr Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage e n c h
1.8 0.05 ID = -14A ® V I GS = -10V D = -7A
M
1.6
NCE M)
0.04
TA OS IS (OH S
1.4
E D E C N -R
0.03
IZE FET N TA AL
1.2
IS
T
E O S
A = 125oC
RM E O -R
0.02
N URC N O
1
-S , O )
T
N N
A = 25oC
(O RAI DS
0.01 0.8
R D
0.6 0 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature Gate-to-Source Voltage
100 1000 V VGS = 0V DS = -5V 100 80
T (A) )
TA = -55oC
EN (A
125oC 10
RR ENT
60
CU
1 TA = 125oC
URR
25oC
AIN N C
0.1 40 25oC
RAI SE DR , D
0.01
D
-55oC
-I
20
, REVER S
0.001
-I
0 0.0001 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6637 Rev. C(W) www.fairchildsemi.com