Datasheet TCK128BG (Toshiba) - 2
| Fabricante | Toshiba |
| Descripción | 0.08 nA Ultra small IQ 1.0 A Load Switch IC in Ultra Small Package |
| Páginas / Página | 13 / 2 — TCK128BG. Absolute Maximum Ratings (Ta = 25°C). Block Diagram. OUT. Slew … |
| Formato / tamaño de archivo | PDF / 819 Kb |
| Idioma del documento | Inglés |
TCK128BG. Absolute Maximum Ratings (Ta = 25°C). Block Diagram. OUT. Slew Rate. Control Driver. Control. Logic. CONTROL. Output. Discharge
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TCK128BG Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN +0.3 V DC 1.0 A Output current IOUT Pulse 2.0 (Note 1) A Power dissipation PD 1.0 (Note 2) W Junction temeperature Tj 150 C Storage temperature Tstg 55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 300 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Glass epoxy board dimension : 40 mm x 40 mm , 4 layer Metal pattern ratio : approximately 70% each layer
Block Diagram V V IN OUT Slew Rate Control Driver Control Logic CONTROL
Control signal
Output
High : OFF
Discharge
Low : ON
GND Operating conditions
Characteristics Symbol Condition Min Max Unit Input voltage VIN ― 1.0 5.5 V Output current IOUT ― ― 1.0 A CONTROL High-level input voltage VIH 0.9 ― V 1.0 V ≤ VIN ≤ 5.5 V CONTROL Low-level input voltage VIL ― 0.4 V Operating Ambient temperature range Ta_opr ― -40 85 C © 2021 2 2021-10-28 Toshiba Electronic Devices & Storage Corporation
Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN +0.3 V DC 1.0 A Output current IOUT Pulse 2.0 (Note 1) A Power dissipation PD 1.0 (Note 2) W Junction temeperature Tj 150 C Storage temperature Tstg 55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 300 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Glass epoxy board dimension : 40 mm x 40 mm , 4 layer Metal pattern ratio : approximately 70% each layer
Block Diagram V V IN OUT Slew Rate Control Driver Control Logic CONTROL
Control signal
Output
High : OFF
Discharge
Low : ON
GND Operating conditions
Characteristics Symbol Condition Min Max Unit Input voltage VIN ― 1.0 5.5 V Output current IOUT ― ― 1.0 A CONTROL High-level input voltage VIH 0.9 ― V 1.0 V ≤ VIN ≤ 5.5 V CONTROL Low-level input voltage VIL ― 0.4 V Operating Ambient temperature range Ta_opr ― -40 85 C © 2021 2 2021-10-28 Toshiba Electronic Devices & Storage Corporation