Datasheet FDV303N (Fairchild) - 2

Electrical Characteristics
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 25 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C 26 mV / oC DSS J D I Zero Gate Voltage Drain Current V = 20 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate - Body Leakage Current V = 8 V, V = 0 V 100 nA GSS GS DS
ON CHARACTERISTICS
(Note) ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C -2.6 mV / oC GS(th) J D V Gate Threshold Voltage V = V , I = 250 µA 0.65 0.8 1.5 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 4.5 V, I = 0.5 A 0.33 0.45 Ω DS(ON) GS D T =125°C 0.52 0.8
J
V = 2.7 V, I = 0.2 A 0.44 0.6 GS D I On-State Drain Current V = 2.7 V, V = 5 V 0.5 A D(ON) GS DS g Forward Transconductance V = 5 V, I = 0.5 A 1.45 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 10 V, V = 0 V, 50 pF iss DS GS f = 1.0 MHz C Output Capacitance 28 pF oss C Reverse Transfer Capacitance 9 pF rss
SWITCHING CHARACTERISTICS
(Note) t Turn - On Delay Time V = 6 V, I = 0.5 A, 3 6 ns D(on) DD D V = 4.5 V, R = 50 Ω Turn - On Rise Time GS GEN t 8.5 18 ns r t Turn - Off Delay Time 17 30 ns D(off) t Turn - Off Fall Time 13 25 ns f Q Total Gate Charge V = 5 V, I = 0.5 A, 1.64 2.3 nC g DS D V = 4.5 V GS Q Gate-Source Charge 0.38 nC gs Q Gate-Drain Charge 0.45 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current 0.3 A S V Drain-Source Diode Forward Voltage V = 0 V, I = 0.5 A (Note) 0.83 1.2 V SD GS S Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV303N Rev.D1