Datasheet FDV303N (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | Digital FET, N-Channel |
| Páginas / Página | 7 / 1 — General Description. www.onsemi.com. SOT−23 (TO−236). Features. CASE … |
| Revisión | 5 |
| Formato / tamaño de archivo | PDF / 270 Kb |
| Idioma del documento | Inglés |
General Description. www.onsemi.com. SOT−23 (TO−236). Features. CASE 318−08. STYLE 21. MARKING DIAGRAM. PIN ASSIGNMENT
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link to page 2 Digital FET, N-Channel FDV303N
General Description
These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device
www.onsemi.com
is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high−efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on−state resistance even at gate drive voltages as low as 2.5 V.
SOT−23 (TO−236) Features CASE 318−08 STYLE 21
• 25 V, 0.68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V
MARKING DIAGRAM
♦ RDS(ON) = 0.6 Ω @ VGS= 2.7 V Drain • Very Low Level Gate Drive Requirements Allowing Direct Operation 3 in 3 V Circuits, V A303M GS(th) < 1 V G • Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body G Model 1 2 Gate Source • Compact Industry Standard SOT−23 Surface Mount Package Aor blank = One/two character Loacation Code • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS 303 = Specific Device Code Compliant M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) * Location code can be blank or with characters indicating manufacturing location * Date Code orientation and overbar may vary depending upon manufacturing location.
PIN ASSIGNMENT
D G S SOT−23
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
March, 2020 − Rev. 5 FDV303N/D
General Description
These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device
www.onsemi.com
is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high−efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on−state resistance even at gate drive voltages as low as 2.5 V.
SOT−23 (TO−236) Features CASE 318−08 STYLE 21
• 25 V, 0.68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V
MARKING DIAGRAM
♦ RDS(ON) = 0.6 Ω @ VGS= 2.7 V Drain • Very Low Level Gate Drive Requirements Allowing Direct Operation 3 in 3 V Circuits, V A303M GS(th) < 1 V G • Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body G Model 1 2 Gate Source • Compact Industry Standard SOT−23 Surface Mount Package Aor blank = One/two character Loacation Code • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS 303 = Specific Device Code Compliant M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) * Location code can be blank or with characters indicating manufacturing location * Date Code orientation and overbar may vary depending upon manufacturing location.
PIN ASSIGNMENT
D G S SOT−23
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
March, 2020 − Rev. 5 FDV303N/D