Datasheet FDN302P (Fairchild) - 4

F DN30 Typical Characteristics 2 P
5 1400
) V
ID = -2.4A VDS = -5V f = 1MHz
(
-10V 1200
E
V = 0 V 4 GS -15V
) F
1000
LTAG p
C
O (
ISS
V
3 800
URCE O
600 2
-S ACITANCE TE A CAP
400
, G
1 COSS
GS
200
-V
CRSS 0 0 0 2 4 6 8 10 0 2 4 6 8 10 12
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 20
)
SINGLE PULSE
W
R R LIMIT θJA = 270°C/W DS(ON)
R ( )
TA = 25°C
A
10 1ms
WE
15
O
10ms
NT (
100ms
NT P
1s
IE
1 10 10s DC VGS =-4.5V
, DRAIN CURRE
SINGLE PULSE
AK TRANS D
0.1
E
5
-I
Rθ = 270oC/W JA
), P
T = 25oC A
(pk P
0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1
ANCE
D = 0.5
ST
RθJA(t) = r(t) + RθJA 0.2 RθJA = 270 °C/W 0.1
RESI
0.1
L A
0.05 P(pk) 0.02
ERM
t
ALIZED EFFECTIVE H
1 0.01
T
0.01 t2
RM NT
T
E
J - TA = P * RθJA(t) SINGLE PULSE Duty Cycle, D = t1 / t2
r(t), NO RANSI
0.001
T
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDN302P Rev C(W)