Datasheet CBR1F, CBR2F (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | FAST RECOVERY SILICON BRIDGE RECTIFIERS |
| Páginas / Página | 4 / 1 — CBR1F SERIES CBR2F SERIES. w w w. c e n t r a l s e m i . c o m. FAST … |
| Formato / tamaño de archivo | PDF / 736 Kb |
| Idioma del documento | Inglés |
CBR1F SERIES CBR2F SERIES. w w w. c e n t r a l s e m i . c o m. FAST RECOVERY. DESCRIPTION:. SILICON BRIDGE RECTIFIERS
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CBR1F SERIES CBR2F SERIES w w w. c e n t r a l s e m i . c o m FAST RECOVERY DESCRIPTION: SILICON BRIDGE RECTIFIERS
The CENTRAL SEMICONDUCTOR CBR1F and CBR2F series types are silicon, single phase, full wave bridge rectifiers designed for fast switching applications.
MARKING: FULL PART NUMBER CASE A MAXIMUM RATINGS:
(TA=50°C)
CBR1F CBR1F CBR1F CBR1F CBR1F CBR1F CBR2F CBR2F CBR2F CBR2F CBR2F CBR2F SYMBOL -010 -020 -040 -060 -080 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (CBR1F) IO 1.5 A Average Forward Current (CBR2F) IO 2.0 A Peak Forward Surge Current (CBR1F) IFSM 50 A Peak Forward Surge Current (CBR2F) IFSM 60 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA IR VR=Rated VRRM, TA=100°C 1.0 mA VF (CBR1F) IF=1.0A 1.3 V VF (CBR2F) IF=2.0A 1.3 V trr (100V, 200V, 400V) IF=0.5A, IR=1.0A, Irr=0.25A 200 ns trr (600V, 800V) IF=0.5A, IR=1.0A, Irr=0.25A 350 ns trr (1000V) IF=0.5A, IR=1.0A, Irr=0.25A 500 ns R1 (18-June 2013)
The CENTRAL SEMICONDUCTOR CBR1F and CBR2F series types are silicon, single phase, full wave bridge rectifiers designed for fast switching applications.
MARKING: FULL PART NUMBER CASE A MAXIMUM RATINGS:
(TA=50°C)
CBR1F CBR1F CBR1F CBR1F CBR1F CBR1F CBR2F CBR2F CBR2F CBR2F CBR2F CBR2F SYMBOL -010 -020 -040 -060 -080 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (CBR1F) IO 1.5 A Average Forward Current (CBR2F) IO 2.0 A Peak Forward Surge Current (CBR1F) IFSM 50 A Peak Forward Surge Current (CBR2F) IFSM 60 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA IR VR=Rated VRRM, TA=100°C 1.0 mA VF (CBR1F) IF=1.0A 1.3 V VF (CBR2F) IF=2.0A 1.3 V trr (100V, 200V, 400V) IF=0.5A, IR=1.0A, Irr=0.25A 200 ns trr (600V, 800V) IF=0.5A, IR=1.0A, Irr=0.25A 350 ns trr (1000V) IF=0.5A, IR=1.0A, Irr=0.25A 500 ns R1 (18-June 2013)