Datasheet CBR1, CBR2 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | SILICON BRIDGE RECTIFIERS |
| Páginas / Página | 4 / 1 — CBR1 SERIES CBR2 SERIES. w w w. c e n t r a l s e m i . c o m. … |
| Formato / tamaño de archivo | PDF / 736 Kb |
| Idioma del documento | Inglés |
CBR1 SERIES CBR2 SERIES. w w w. c e n t r a l s e m i . c o m. DESCRIPTION:. SILICON BRIDGE RECTIFIERS
Línea de modelo para esta hoja de datos
Versión de texto del documento
CBR1 SERIES CBR2 SERIES w w w. c e n t r a l s e m i . c o m DESCRIPTION: SILICON BRIDGE RECTIFIERS
The CENTRAL SEMICONDUCTOR CBR1 and CBR2 series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications.
MARKING: FULL PART NUMBER CASE A MAXIMUM RATINGS:
(TA=50°C)
CBR1 CBR1 CBR1 CBR1 CBR1 CBR1 CBR2 CBR2 CBR2 CBR2 CBR2 CBR2 SYMBOL -010 -020 -040 -060 -080 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (CBR1) IO 1.5 A Average Forward Current (CBR2) IO 2.0 A Peak Forward Surge Current (CBR1) IFSM 50 A Peak Forward Surge Current (CBR2) IFSM 60 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF (CBR1) IF=1.0A 1.0 V VF (CBR2) IF=2.0A 1.1 V R1 (31-July 2013)
The CENTRAL SEMICONDUCTOR CBR1 and CBR2 series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications.
MARKING: FULL PART NUMBER CASE A MAXIMUM RATINGS:
(TA=50°C)
CBR1 CBR1 CBR1 CBR1 CBR1 CBR1 CBR2 CBR2 CBR2 CBR2 CBR2 CBR2 SYMBOL -010 -020 -040 -060 -080 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (CBR1) IO 1.5 A Average Forward Current (CBR2) IO 2.0 A Peak Forward Surge Current (CBR1) IFSM 50 A Peak Forward Surge Current (CBR2) IFSM 60 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF (CBR1) IF=1.0A 1.0 V VF (CBR2) IF=2.0A 1.1 V R1 (31-July 2013)