Datasheet CPD04-CBRHD-06 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | General Purpose Rectifier Die 0.5 Amp, 600 Volt |
| Páginas / Página | 4 / 1 — General Purpose Rectifier Die. www.centra lsemi.com. 0.5 Amp, 600 Volt. … |
| Formato / tamaño de archivo | PDF / 523 Kb |
| Idioma del documento | Inglés |
General Purpose Rectifier Die. www.centra lsemi.com. 0.5 Amp, 600 Volt. MECHANICAL SPECIFICATIONS:. MAXIMUM RATINGS:. SYMBOL. UNITS
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CPD04-CBRHD-06
General Purpose Rectifier Die www.centra lsemi.com 0.5 Amp, 600 Volt
The CPD04-CBRHD-06 is a silicon 0.5 Amp, 600 Volt general purpose rectifi er ideal for all types of commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Size 14 x 14 MILS Top Side Metalization Ni/Au – 5,000Å/1,350Å Back Side Metalization Ni/Au – 5,000Å/1,350Å Scribe Alley Width 2.5 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 15,907
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 600 V DC Blocking Voltage VR 600 V RMS Reverse Voltage VR(RMS) 420 V Average Forward Current (TA=40°C) IO 0.5 A Peak Forward Surge Current, tp=8.3ms IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=600V 5.0 µA VF IF=400mA 1.0 V CJ VR=0, f=1.0MHz 25 pF R1 (6-March 2019)
General Purpose Rectifier Die www.centra lsemi.com 0.5 Amp, 600 Volt
The CPD04-CBRHD-06 is a silicon 0.5 Amp, 600 Volt general purpose rectifi er ideal for all types of commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Size 14 x 14 MILS Top Side Metalization Ni/Au – 5,000Å/1,350Å Back Side Metalization Ni/Au – 5,000Å/1,350Å Scribe Alley Width 2.5 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 15,907
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 600 V DC Blocking Voltage VR 600 V RMS Reverse Voltage VR(RMS) 420 V Average Forward Current (TA=40°C) IO 0.5 A Peak Forward Surge Current, tp=8.3ms IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=600V 5.0 µA VF IF=400mA 1.0 V CJ VR=0, f=1.0MHz 25 pF R1 (6-March 2019)