Datasheet CBR1-L010M (Central Semiconductor)

FabricanteCentral Semiconductor
DescripciónSILICON BRIDGE RECTIFIERS
Páginas / Página4 / 1 — CBR1-L010M SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE …
Formato / tamaño de archivoPDF / 618 Kb
Idioma del documentoInglés

CBR1-L010M SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE RECTIFIERS. DESCRIPTION:. MARKING: FULL PART NUMBER

Datasheet CBR1-L010M Central Semiconductor

Línea de modelo para esta hoja de datos

Versión de texto del documento

CBR1-L010M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1-L010M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications.
MARKING: FULL PART NUMBER CASE B-M MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR1 SYMBOL -L010M -L020M -L040M -L060M -L080M -L100M UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TA=50°C) IO 1.5 A Peak Forward Surge Current IFSM 50 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA IR VR=Rated VRRM, TA=125°C 500 μA VF IF=1.0A 1.0 V R1 (25-February 2013)