Datasheet CBRSDSH2-40 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | SURFACE MOUNT 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| Páginas / Página | 6 / 1 — CBRSDSH2-40. SURFACE MOUNT. www.centra lsemi.com. 2 AMP SILICON. … |
| Formato / tamaño de archivo | PDF / 1.0 Mb |
| Idioma del documento | Inglés |
CBRSDSH2-40. SURFACE MOUNT. www.centra lsemi.com. 2 AMP SILICON. DESCRIPTION:. SCHOTTKY BRIDGE RECTIFIER. MARKING: FULL PART NUMBER
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CBRSDSH2-40 SURFACE MOUNT www.centra lsemi.com 2 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRSDSH2-40 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER FEATURES: •
Low Leakage Current (40µA TYP @ VRRM)
•
High 2.0A Current Rating
SMDIP CASE •
Low VF Schottky Diodes (400mV TYP @ IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 110 A Operating and Storage Junction Temperature TJ, Tstg -50 to +125 °C Typical Thermal Resistance (Note 1) ΘJA 40 °C/W Typical Thermal Resistance ΘJL 15 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V 40 70 µA VF IF=2.0A 400 450 mV CJ VR=4.0V, f=1.0MHz 400 500 pF Notes: (1) Devices mounted on PCB with 13mm x 13mm copper pads. R1 (26-October 2011)
The CENTRAL SEMICONDUCTOR CBRSDSH2-40 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER FEATURES: •
Low Leakage Current (40µA TYP @ VRRM)
•
High 2.0A Current Rating
SMDIP CASE •
Low VF Schottky Diodes (400mV TYP @ IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 110 A Operating and Storage Junction Temperature TJ, Tstg -50 to +125 °C Typical Thermal Resistance (Note 1) ΘJA 40 °C/W Typical Thermal Resistance ΘJL 15 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V 40 70 µA VF IF=2.0A 400 450 mV CJ VR=4.0V, f=1.0MHz 400 500 pF Notes: (1) Devices mounted on PCB with 13mm x 13mm copper pads. R1 (26-October 2011)