Datasheet CBRHDSH2-100 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| Páginas / Página | 4 / 1 — CBRHDSH2-100. SURFACE MOUNT. www.centra lsemi.com. HIGH DENSITY. 2 AMP … |
| Formato / tamaño de archivo | PDF / 1.0 Mb |
| Idioma del documento | Inglés |
CBRHDSH2-100. SURFACE MOUNT. www.centra lsemi.com. HIGH DENSITY. 2 AMP SILICON. DESCRIPTION:. SCHOTTKY BRIDGE RECTIFIER
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CBRHDSH2-100 SURFACE MOUNT www.centra lsemi.com HIGH DENSITY 2 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODE: CSH10 FEATURES: •
Low Leakage Current (700nA TYP @ VRRM)
•
High 2.0A Current Rating
HD DIP CASE •
Low VF Schottky Diodes (840mV MAX @ IF=2.0A)
•
Device is
Halogen Free
by design
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TA=75°C) IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 50 A Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=100V 0.70 4.0 µA VF IF=500mA 610 mV VF IF=1.0A 700 mV VF IF=2.0A 770 840 mV CJ VR=4.0V, f=1.0MHz 250 pF R4 (19-August 2020)
The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODE: CSH10 FEATURES: •
Low Leakage Current (700nA TYP @ VRRM)
•
High 2.0A Current Rating
HD DIP CASE •
Low VF Schottky Diodes (840mV MAX @ IF=2.0A)
•
Device is
Halogen Free
by design
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Forward Current (TA=75°C) IO 2.0 A Peak Forward Surge Current (8.3ms) IFSM 50 A Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=100V 0.70 4.0 µA VF IF=500mA 610 mV VF IF=1.0A 700 mV VF IF=2.0A 770 840 mV CJ VR=4.0V, f=1.0MHz 250 pF R4 (19-August 2020)