Datasheet CBRHDSH1-40L (Central Semiconductor)

CBRHDSH1-40L SURFACE MOUNT www.centra lsemi.com HIGH DENSITY 1 AMP LOW V DESCRIPTION: F SILICON SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHDSH1-40L is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CSH1 FEATURES: •
Low Leakage Current (20µA TYP @ VRRM)
•
High 1.0A Current Rating
HD DIP CASE •
Low VF Schottky Diodes (440mV MAX @ IF=1.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current IO 1.2 A Peak Repetitive Forward Current IFRM 1.7 A Peak Forward Surge Current IFSM 20 A Power Dissipation PD 1.2 W Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C Thermal Resistance ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V 20 50 µA IR VR=40V, TA=100°C 5.0 20 mA VF IF=500mA 360 380 mV VF IF=1.0A 390 440 mV CJ VR=4.0V, f=1.0MHz 150 pF R5 (19-August 2020)