Datasheet CBRHDSH1-200 (Central Semiconductor)

CBRHDSH1-200 SURFACE MOUNT www.centra lsemi.com HIGH DENSITY 1 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHDSH1-200 is a full wave bridge rectifier in a durable surface mount epoxy molded case, designed for high voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O.
MARKING CODE: CSH120 HD DIP CASE FEATURES: APPLICATIONS: •
Low forward voltage (0.76V TYP @ 1.0A)
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Input rectification for LED lighting
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Low leakage current (0.2μA TYP @ 200V)
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Power over ethernet (PoE) peripherals
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High current rating: 1.0A
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General purpose full wave rectification
•
High voltage rating: 200V
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 200 V DC Blocking Voltage VR 200 V RMS Reverse Voltage VR(RMS) 140 V Average Forward Current IO 1.0 A Peak Forward Surge Current IFSM 20 A Power Dissipation PD 1.2 W Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C Thermal Resistance ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=200V 0.2 50 μA IR VR=200V, TA=100°C 20 mA BVR IR=100μA 200 220 V VF IF=1.0A 760 900 mV R2 (19-August 2020)